Current status of reliability of InGaP/GaAs HBTs

Ueda, Osamu; Kawano, Akihiro; Takahashi, Tsuyoshi; Tomioka, T.; Fujii, Toshio; Sasa, Shigehiko

doi:10.1016/s0038-1101(97)00112-3

Cited by 33 publications

(8 citation statements)

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“…Nevertheless, carbon-doped AlGaAs-emitter GaAs HBTs still had poor reliability. Ueda and coworkers at Fujitsu reported their AlGaAs-emitter HBTs had Ea = 0.6 ± 0.1 eV with projected 10 kh lifetime at 120C [3]. Such results led Fujitsu to become one of the early leaders in developing InGaP-emitter HBTs.…”

Section: B Evolution Of Wearout Reliability In Gaas Hbtsmentioning

confidence: 99%

“…In InGaPemitter HBTs, the gradual drift is relatively small (nearly zero), except possibly at high voltage [6], Fig. 5) 3) There is large sudden β drop at end of life [2,3,7,8,11].…”

Section: B Evolution Of Wearout Reliability In Gaas Hbtsmentioning

confidence: 99%

“…It is interesting that InP-based HBTs and LEDs (InGaAsP) do not exhibit sudden failures, which has been attributed to having insufficient available energy for shifting atoms and allowing defects to grow. Ueda [3] has found evidence of C and metallic precipitates near the base of failed InGaP transistors.…”

Section: B Evolution Of Wearout Reliability In Gaas Hbtsmentioning

confidence: 99%

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GaAs HBT Reliability

Yeats

Low

Alt

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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We discuss the many factors affecting the reliability of GaAs HBTs that we have encountered starting from the early days of AlGaAs-emitter HBTs through the present day use of InGaP-emitter HBTs. We discuss both wearout and infancy failure modes and try to distinguish fundamental (i.e., unavoidable) from nonfundamental failure modes. We have found that infant failures are dominated by substrate dislocation density, which can limit long-term-reliable circuit sizes to under ~1000 transistors.

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Section: B Evolution Of Wearout Reliability In Gaas Hbtsmentioning

confidence: 99%

“…In InGaPemitter HBTs, the gradual drift is relatively small (nearly zero), except possibly at high voltage [6], Fig. 5) 3) There is large sudden β drop at end of life [2,3,7,8,11].…”

Section: B Evolution Of Wearout Reliability In Gaas Hbtsmentioning

confidence: 99%

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GaAs HBT Reliability

Yeats

Low

Alt

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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“…The reliability of HBTs with InGaP emiitters has been studied over the past several years by many authors [1][2][3][4][5][6][7][8]. The reported MTTF (median time to failure) has varied over a wide range, from <107 to 3 x io9 hr.s at 125 0C [1,5].…”

Section: I Introductionmentioning

confidence: 99%

Reliability results of HBTs with an InGaP emitter

Whitman

2005

[Reliability of Compound Semiconductors] ROCS Workshop, 2005.

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0183 cwhitman@rfmd com 1. Abstract Accelerated lifetest results are presented on HBTs with InGaP emitters. The data from this experiment are analyzed in several ways. An Arrhenius plot indicates the existence of a tempemture dependent activation energy, E. A low Ea mechanism dominates above Tj 380°C and a high Ea mechanism dominates at lower temperature. The critical transition temperature between regimes is determined using the method of maximum likelihood. The difference in Ea's between low and high temperature regimes is statistically significant.The HBTs are divided into two groups, A and B. Group A contains a total of 116 devices from II wafer lots. The analysis suggests further splitting group A into high and low temperature subgroups.The A-high H-BTs are run stressed at Tj's of 379, 391 and 413 OC and A-low devices are tested at Tj's of 312, 355 and 367 OC. Group B is composed of HBTs from 7 lots from an earlier qualification and are stressed at Tj of285, 305 and 325 OC.A comparison is made between estimates from degradation measurements performed at temperature vs. 40°C for group A-low. No significant difference is observed indicating that beta degradation can be monitored at temperature only and cooling to low temperature is not necessary. Further, the predictions from group A-low and group B data are found to be in good agreement indicating that very high junction temperatures can still provide good estimates of lower temperature behavior.By the method of maximum likelihood, the group A-low data predicts a MTTF at T-= 125°C of 7.6 x 109 hours with 95% CBs of [6.4 x 108, 8.9 x I o'1. Given the typical industry standard of I x 1 06 hours, the reliability requirements are easily met.It is suggested that the standard of lx 106 hours does not adequately take failure time variation into account and that a better specification is in terms of FITs (fails in time). The 20 year average FIT rate at 125 IC is found to be negligible. Assuming a much higher junction temperature of 200 IC, the average failure rate climbs to 0.65 FITs with an upper 95% confidence bound of-6 FITs.

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“…2 Significant hydrogen concentrations in HBT base layers have also been shown to affect the device reliability due to hydrogen redistribution caused by electrical or thermal stress. 3,4 Therefore minimizing hydrogen incorporation using optimized growth conditions or finding appropriate annealing procedures for an ex-situ out-diffusion of hydrogen are essential tasks in growth optimization.…”

Section: Introductionmentioning

confidence: 99%

Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

Brunner

Richter

Bergunde

et al. 2000

J. Electron. Mater.

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We have investigated the effect of high-temperature annealing on device performance of GaInP/GaAs HBTs using a wide range of MOVPE growth parameters for the C-doped base layer. Carbon doping was achieved either via TMG and AsH 3 only or by using an extrinsic carbon source. High-temperature annealing causes degradation of carbon-doped GaAs in terms of minority carrier properties even at doping levels of p = 1 × 10 19 cm -3 . The measured reduction in electron lifetime and luminescence intensity correlates with HBT device results. It is shown that the critical temperature where material degradation starts is both a function of doping method and carbon concentration.

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Current status of reliability of InGaP/GaAs HBTs

Cited by 33 publications

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GaAs HBT Reliability

GaAs HBT Reliability

Reliability results of HBTs with an InGaP emitter

Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

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