Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

Abstract

We have investigated the effect of high-temperature annealing on device performance of GaInP/GaAs HBTs using a wide range of MOVPE growth parameters for the C-doped base layer. Carbon doping was achieved either via TMG and AsH 3 only or by using an extrinsic carbon source. High-temperature annealing causes degradation of carbon-doped GaAs in terms of minority carrier properties even at doping levels of p = 1 × 10 19 cm -3 . The measured reduction in electron lifetime and luminescence intensity correlates with HBT device results. It is shown that the critical temperature where material degradation starts is both a function of doping method and carbon concentration.

Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors

“…Brunner et al investigated effects of thermal annealing on current gain and lifetime between intrinsic doping and CBr 4 doping. 20) They found that the current gain reduction for intrinsic doping was 70%, whereas it was 50% using CBr 4 doping. The growths using CBr 4 doping were conducted on temperatures from 540 to 600 C and V/III ratios from 2 to 12.…”

“…High temperature annealing removes hydrogen from the base layer; however, it also degrades HBT performances. 17,20) This paper presents the dependence of the V/III ratio of the base layer on current gain at various annealing conditions. The results have demonstrated that the V/III ratio plays a key role in current gain and its thermal stability.…”

Hydrogen-related defects in InGaP/GaAs heterojunction bipolar transistors

“…There are several reports on thermal annealing effects on current gain [14,15]. However, the devices consisted of Si-doped GaAs sub-collector concentrations $5 Â 10 18 cm À3 .…”

Growth and characterization of heavily selenium doped GaAs using MOVPE

“…Carbon doping in p-GaAs up to concentrations of 1 Â 10 20 cm À3 is well established, and is used for the p-side of the tunnel junctions [1,2]. In contrast, the maximum achievable doping concentration in n-GaAs is known to be limited well below 1 Â 10 19 cm À3 [3].…”