Current transients in almost-ideal Czochralski silicon p–n junction diodes

Poyai, Amporn; Simoen, Eddy; Claeys, Cor

doi:10.1063/1.125345

Cited by 2 publications

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“…This was needed to suppress light-induced transients for the largest diodes in Cz substrates, as reported previously. 7 Temperature dependent measurements were done in the range 25-120°C, allowing extraction of the E T of the reverse current density. Capacitance-voltage measurements were performed on the same diodes at a frequency of 100 kHz, as a function of temperature, to extract the volume depletion width W A , according to the method described earlier, 5 The J A derived from the geometric separation consists of the sum of J dA and J gA .…”

Section: Improved Extraction Of the Activation Energy Of The Leakage mentioning

confidence: 99%

Improved extraction of the activation energy of the leakage current in silicon p–n junction diodes

Poyai

Simoen

Claeys

et al. 2001

Applied Physics Letters

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An accurate method is proposed for the extraction of the activation energy ET from the volume generation current density JgA in silicon p–n junctions. It combines temperature-dependent current–voltage (I–V) and capacitance–voltage measurements on an array of diodes with different geometry, in order to separate the peripheral from the volume components. The JgA can be found from the volume leakage current by subtraction of the volume diffusion current JdA, which is calculated from the forward I–V characteristic. To derive the correct slope from an Arrhenius plot of the JgA, several additional corrections have been applied. One is the temperature dependence of the depletion width, which is derived from the corrected volume capacitance. The most important ET change is shown to come from the temperature dependence of the recombination lifetime.

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Section: Improved Extraction Of the Activation Energy Of The Leakage mentioning

confidence: 99%

Improved extraction of the activation energy of the leakage current in silicon p–n junction diodes

Poyai

Simoen

Claeys

et al. 2001

Applied Physics Letters

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“…More details about this phenomenon are reported elsewhere. 8 However, in order to obtain a stable ͑steady state͒ I-V, one has to measure the p-type CZ Si diode characteristics preferably from reverse to forward bias, waiting sufficiently long after a previous exposure to the ambient light, i.e., using a hold time of 120 s. These transients did not occur for the p-well diodes, but the same holding time was applied here as well.…”

Section: Methodsmentioning

confidence: 99%

Diode Analysis of High-Energy Boron Implantation-Induced P-Well Defects

Poyai

Simoen²,

Claeys

et al. 2001

J. Electrochem. Soc.

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The use of a p-n junction diode as a tool for the assessment of the p-well quality is demonstrated, by analyzing in detail the current-voltage and capacitance-voltage characteristics of n ϩ -p-well junctions surrounded by either shallow trench isolation or polysilicon encapsulated local oxidation of silicon. As a reference, diodes fabricated in a p-type substrate and defined by a local oxidation of silicon isolation have been used. Particular emphasis is on the lifetime properties and leakage current activation energy of the p-well region, which has been fabricated by a deep ͑200 keV͒ and a shallow ͑55 keV͒ boron ion implantation. That the leakage current of large area diodes is governed by electric field-assisted generation of carriers from residual, unannealed deep B-implantation damage is demonstrated. The presence of such defects is confirmed by deep level transient spectroscopy analysis. The generation lifetime profile in the depletion region and the reverse current activation energy are extracted by taking account of the electric field enhancement factor of the thermal generation. Finally, it is shown that the generation lifetime and residual defects depend mainly on the global thermal budget and little on the isolation scheme used.The development of deep submicrometer complementary metal oxide semiconductor ͑CMOS͒ technology must consider harmful phenomena such as latch-up and the occurrence of soft errors. To a large extent, the problem can be solved by a local modification of the substrate carrier concentration. This is usually achieved by a high energy ion implantation followed by a dopant activation and damage-removal anneal. However, note that the use of a few hundreds keV or even MeV ion implantation introduces peak displacement damage near the projected range of the ions, which may amount up to several micrometers in the silicon substrate. This damage is difficult to remove even after a high temperature annealing. 1 Furthermore, implementing such a p-well in a submicrometer CMOS technology severely constrains the affordable thermal budget. This results in an insufficient damage annealing. However, as long as the residual defects are far from the junction depletion region, they will be relatively harmless. On the other hand, when lying too close to the junction, these defects may have an impact on the diode current-voltage ͑I-V͒ characteristics. In addition, the presence of vacancy or interstitial type of damage clusters in the p-well may have an impact on the diffusion behavior of both the p-well and the shallow junction dopant species, through point-defect-assisted diffusion enhancement. Therefore, the present paper uses p-n junction diodes, fabricated with different isolation schemes as a tool for the assessment of the residual p-well defects by studying the I-V and capacitance-voltage ͑C-V͒ characteristics in detail. ExperimentalShallow n ϩ -p diodes compatible with submicrometer CMOS technology have been processed on Czochralski ͑CZ͒ 150 mm diam p-type substrates. Local oxidation of silicon ͑LOC...

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Current transients in almost-ideal Czochralski silicon p–n junction diodes

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Cited by 2 publications

References 10 publications

Improved extraction of the activation energy of the leakage current in silicon p–n junction diodes

Improved extraction of the activation energy of the leakage current in silicon p–n junction diodes

Diode Analysis of High-Energy Boron Implantation-Induced P-Well Defects

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