Improved extraction of the activation energy of the leakage current in silicon <i>p–n</i> junction diodes

Poyai, Amporn; Simoen, Eddy; Claeys, Corneel; Czerwiński, A.; Gaubas, E.

doi:10.1063/1.1359487

Cited by 19 publications

(19 citation statements)

References 11 publications

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“…The observed divergence is owed to the electric field correction F f ield . The correction must not be applied to the diffusion component of the dark current, since the electric field dependence of I dif f usion can be neglected, as reported in [3]. Since the correction was applied to the total multiplied current, it was expected to observe an overestimation in high overvoltage regimes, especially at temperature, for which the diffusion component is dominating.…”

Section: Resultsmentioning

confidence: 99%

“…In order to achieve this requirement, a distinction of contributions determining the DCR is needed to be able to identify the dominating mechanisms. As reported in [1,3,4,5] the extraction of characteristic activation energies from the temperature dependence of the dark current is able to provide information on the dominating mechanisms. Unfortunately these methods are not suited for a precise determination of the needed energy levels, since the investigated dark currents are determined by a mixture of effects depending on voltage on the one hand (e.g.…”

mentioning

confidence: 89%

“…Modelling the multiplied component I ini , δ was chosen such that the breakdown point (see red circle in figure 4) was matched. The total current is then given by equation (3). The reconstructed currents for three temperatures are shown in figure 5.…”

Section: First Approachmentioning

confidence: 99%

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Extraction of activation energies from temperature dependence of dark currents of SiPM

Engelmann

Vinogradov

Popova

et al. 2016

J. Phys.: Conf. Ser.

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Abstract. Despite several advantages of Silicon Photomultipliers (SiPM) over Photomultiplier Tubes (PMT) like the increased photon detection efficiency (PDE), the compact design and the insensitivity to magnetic fields, the dark count rate (DCR) of SiPM is still a large drawback. Decreasing of the SiPM dark count rate has become a modern task, which could lead to an enormous enhancement of the application range of this promising photo-detector. The main goal of this work is to gain initial information on the dark generation and identify the dominating contributions to dark currents. The chosen approach to fulfill this task is to extract characteristic activation energies of the contributing mechanisms from temperature dependent investigations of dark currents and DCR. Since conventional methods are not suited for a precise analysis of activation energies, a new method has to be developed. In this paper, first steps towards the development of a reliable method for the analysis of dark currents and dark events are presented. IntroductionThe dark count rate (DCR) of the Silicon Photomultiplier (SiPM) is still a limiting factor for the extension of its application range and requires a significant reduction. In order to achieve this requirement, a distinction of contributions determining the DCR is needed to be able to identify the dominating mechanisms. As reported in [1,3,4,5] the extraction of characteristic activation energies from the temperature dependence of the dark current is able to provide information on the dominating mechanisms. Unfortunately these methods are not suited for a precise determination of the needed energy levels, since the investigated dark currents are determined by a mixture of effects depending on voltage on the one hand (e.g. generation current, electric field effects) and overvoltage on the other hand (e.g. gain, crosstalk, afterpulsing). In this paper, we propose a new method to separate the mentioned effects using the responsivity of the detector as an appropriate reference for the measured dark current. This approach allows us

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 89%

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Extraction of activation energies from temperature dependence of dark currents of SiPM

Engelmann

Vinogradov

Popova

et al. 2016

J. Phys.: Conf. Ser.

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“…Indeed, I S can be expressed as being proportional to e (−Ea/kT ) , where k is the Boltzmann constant and T is the absolute temperature. From an Arrhenius plot of I S (T ) as a function of 1/kT , the activation energy E a can be extracted [26][27][28]. This activation energy can be associated to an energy barrier that has to be overcome for the corresponding process to occur.…”

Section: Temperature-dependent Current-voltage Characteristicsmentioning

confidence: 99%

Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes

Baert

Gupta

Gencarelli

et al. 2015

Solid-State Electronics

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In this work, the electrical properties of p-GeSn/n-Ge diodes are investigated in order to assess the impact of defects at the interface between Ge and GeSn using temperature-dependent current-voltage and capacitance-voltage measurements. These structures are made from GeSn epitaxial layers grown by CVD on Ge with in-situ doping by Boron. As results, an average ideality factor of 1.2 has been determined and an activation energy comprised between 0.28 eV and 0.30 eV has been extracted from the temperature dependence of the reverse-bias current. Based on the comparison with numerical results obtained from device simulations, we explain this activation energy by the presence of traps located near the GeSn/Ge interface.

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“…This value of E T would be closer to the intrinsic level, if the temperature dependence of the recombination lifetime is taken into account. 25 …”

Section: -21mentioning

confidence: 99%

Analysis of the Temperature Dependence of Trap-Assisted Tunneling in Ge pFET Junctions

González

Eneman

Wang

et al. 2011

J. Electrochem. Soc.

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In this work, the temperature behavior of trap-assisted tunneling (TAT) in Ge pFET junctions selectively grown in STI substrates is evaluated, whereby the impact of the electric field and the threading dislocation density (TDD) is studied for temperatures ranging from 233 to 418 K. The experimental results are compared with the TAT model for Si proposed by [G. A. M. Hurkx, D. B. M. Klaassen, and M. P. G. Knuvers, IEEE Trans. Electron Devices, 39, 331 (1992)], where several parameters (such as the effective mass and trap level values) are adapted in order to obtain the best agreement between the model and the experimental results. In the frame of channel engineering, Ge pMOS devices are currently being investigated as a potential candidate to extend the technology roadmap below the 22 nm node. This is motivated as follows. For the most recent technology, the implementation of high-k gate dielectrics, which reduces the low-field mobility due to remote phonon and Coulomb scattering, leads to the necessity of searching for new channel materials to achieve a significant carrier mobility enhancement and higher drive current. This offers an excellent opportunity for other materials than Si. For example, Ge is considered for pFETs and Ge or III-V materials for nFETs. Germanium has a 4.4 times higher bulk hole mobility than silicon. This can enhance the circuit speed, through an increase of the transistor drive current or I ON . However, in order to integrate germanium using silicon process tools, Ge transistors need to be fabricated in thin Ge layers processed on a Si handle or carrier wafer, which raises new concerns. One such issue is the presence of extended defects at the Ge/ Si hetero-interface, owing to the 4% lattice mismatch between Si and Ge, which can significantly degrade the mobility enhancement, thus reducing the on-state current.Furthermore, the presence of defects can increase/aggravate the leakage current in the sub-threshold region or I OFF state leakage, through the drain-to-substrate junction leakage.2 Moreover, one of the key concerns for germanium is the narrow bandgap (0.66 eV) compared to unstrained Si (1.1 eV). For advanced CMOS nodes, where higher halo implantations are used and high electric fields are present, the smaller bandgap can considerably increase the drainsubstrate junction leakage for the shorter channel MOSFETs, through field assisted mechanisms like Trap-Assisted Tunneling (TAT) and Band-To-Band Tunneling (BTBT). The high drain-substrate leakage will increase the off-state current and the power consumption. Therefore, it is important to keep a good defect control with an acceptable current level. For this purpose, a better understanding of the field-assisted leakage current mechanisms occurring in the Ge drain-substrate junction is required. ExperimentalProcessing Details.-The Ge pFET junctions were fabricated on 200 mm diameter (100) n-type Czochralski silicon wafers. Active diode regions were defined by shallow trench isolation (STI) followed by P implantations and an n-well anne...

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Improved extraction of the activation energy of the leakage current in silicon p–n junction diodes

Cited by 19 publications

References 11 publications

Extraction of activation energies from temperature dependence of dark currents of SiPM

Extraction of activation energies from temperature dependence of dark currents of SiPM

Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes

Analysis of the Temperature Dependence of Trap-Assisted Tunneling in Ge pFET Junctions

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