Current transport in copper indium gallium diselenide solar cells comparing mesa diodes to the full cell

Tan, Jin-Hui; Anderson, Wayne A.

doi:10.1016/s0927-0248(02)00349-5

Cited by 32 publications

(11 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(iii) The increase of conductance in reverse bias agrees well with the slightly non-Ohmic nature of shunt currents typical for thin-film solar cells [29,30]. Our data suggest a voltage-dependent shunt current of approximately I sh ∝ jVj 1.5 , in a similar range as reported earlier [31,32]. The high-frequency feature (arrow in Fig.…”

Section: Serial Equivalent Circuit: Junction and Buffer Layersupporting

confidence: 90%

Buffer Layers, Defects, and the Capacitance Step in the Admittance Spectrum of a Thin-Film Solar Cell

Werner

Siebentritt

2018

Phys. Rev. Applied

View full text Add to dashboard Cite

Defects in complex multilayered thin-film solar cells are often analyzed by capacitance-based techniques, which originally were developed for simple homojunctions in single-crystal bulk semiconductors. We discuss the impact of a capacitive and conductive buffer layer on the impedance and capacitance spectra of thin-film solar cells. While the resulting capacitance spectra are indistinguishable from those caused by a deep defect level, the buffer layer and p-n junction can clearly be distinguished in the experimental impedance spectra. Exploiting bias voltage and illumination as additional experimental parameters allows us to test a given hypothesis-deep defect or buffer layer-to explain characteristic capacitance steps in thermal admittance spectroscopy of thin-film solar cells. We address the controversial origin of the N1 signature commonly observed in admittance spectroscopy of CuðIn; GaÞSe 2 solar cells. The circuit element dominantly defining the main capacitance step in our devices is unaffected by applied bias voltage, and its conductivity increases linearly with illumination intensity. We conclude that the main capacitance step in our devices is most plausibly explained by the presence of a buffer layer connected in series to the p-n junction of the device and is not related to any deep defects or mobility freeze-out.

show abstract

Section: Serial Equivalent Circuit: Junction and Buffer Layersupporting

confidence: 90%

Buffer Layers, Defects, and the Capacitance Step in the Admittance Spectrum of a Thin-Film Solar Cell

Werner

Siebentritt

2018

Phys. Rev. Applied

View full text Add to dashboard Cite

show abstract

“…Considerable variations between nominally identical Cu͑In,Ga͒Se 2 devices were found. 6 For CdS/CdTe polycrystalline PV cells, OBIC ͑Ref. 7͒ and EBIC ͑Refs.…”

Section: Survey Of Mesoscale Nonuniformity Observationsmentioning

confidence: 99%

Random diode arrays and mesoscale physics of large-area semiconductor devices

2004

View full text Add to dashboard Cite

Large-area, thin-film semiconductor devices often exhibit strong fluctuations in electronic properties on a mesoscale level that originate from relatively weak microscopic fluctuations in material structures such as grain size, chemical composition, and film thickness. Amplification comes from the fact that electronic transport through potential barriers is exponentially sensitive to the local parameter fluctuations. These effects create new phenomena and establish the physics of large-area, thin-film devices as a distinctive field of its own, quite different from that of microelectronics. We show that ͑i͒ large-area semiconductor thin-film devices are intrinsically nonuniform in the lateral directions, ͑ii͒ the nonuniformity can span length scales from millimeters to meters depending on external drivers such as light intensity and bias, and ͑iii͒ this nonuniformity significantly impacts the performance and stability of, e.g., photovoltaics, liquid crystal displays, and light emitting arrays. From the theoretical standpoint our consideration introduces a new class of disordered systems, which are random diode arrays. We propose a theory describing one class of such arrays and derive a figure of merit that characterizes the significance of nonuniformity effects. Our understanding suggests some methods for blocking the effects of nonuniformities.

show abstract

“…Region I spans bias voltage smaller than 0.3 V, including reverse bias voltage; Region II includes bias voltage larger than 0.3 V. Region I displays the dark I – V curves obtained under low forward bias and reverse bias, in which the I dark is dominated by space charge limited (SCL) current. The behavior of SCL current is only determined by space charges captured by defects in the bulk area of CZTSe, irrelevant to built‐in potential, and is usually observed under reverse bias or at positions where built‐in electric field becomes ineffective when under forward bias 43 . Therefore, I dark in this region can also be regarded as shunt leakage current of the CZTSe solar cell.…”

Section: Resultsmentioning

confidence: 99%

Sustainable Cu₂ZnSnSe₄ photovoltaic cells fabricated with a sputtered CdS buffer layer

Lai

Yang

Hsu

et al. 2020

Progress in Photovoltaics

View full text Add to dashboard Cite

In this study, the effect of the Cu concentration on the characteristics of the Cu2ZnSnSe4 (CZTSe) absorber layers and solar cells was systematically analyzed by postselenization of the evaporated precursor deposits. The results demonstrated that an increase in the copper concentration of the precursor linearly increased the Cu content in the final CZTSe thin‐film formation. This significantly increased the particle size and improved the re‐evaporation loss of the SnSe, thus improving the solar cell characteristics. However, a further increase in the Cu concentration reduced the quality of the absorber layer and formed either CuxSe or CTSe secondary phases, which was detrimental to the solar cell characteristics. Here, we introduce a sputtered CdS buffer layer for the CZTSe solar cells. These findings offer new research directions for solving the persistent challenges in the chemical bath deposition (CBD) of the CdS in the CZTSe solar cells.

show abstract

Current transport in copper indium gallium diselenide solar cells comparing mesa diodes to the full cell

Cited by 32 publications

References 10 publications

Buffer Layers, Defects, and the Capacitance Step in the Admittance Spectrum of a Thin-Film Solar Cell

Buffer Layers, Defects, and the Capacitance Step in the Admittance Spectrum of a Thin-Film Solar Cell

Random diode arrays and mesoscale physics of large-area semiconductor devices

Sustainable Cu₂ZnSnSe₄ photovoltaic cells fabricated with a sputtered CdS buffer layer

Contact Info

Product

Resources

About

Current transport in copper indium gallium diselenide solar cells comparing mesa diodes to the full cell

Cited by 32 publications

References 10 publications

Buffer Layers, Defects, and the Capacitance Step in the Admittance Spectrum of a Thin-Film Solar Cell

Buffer Layers, Defects, and the Capacitance Step in the Admittance Spectrum of a Thin-Film Solar Cell

Random diode arrays and mesoscale physics of large-area semiconductor devices

Sustainable Cu2ZnSnSe4 photovoltaic cells fabricated with a sputtered CdS buffer layer

Contact Info

Product

Resources

About

Sustainable Cu₂ZnSnSe₄ photovoltaic cells fabricated with a sputtered CdS buffer layer