Current Transport Through Lead–Borosilicate Interfacial Glass Layers at the Screen–Printed Silver-Silicon Front Contact

Mäckel, Helmut; Altermatt, Pietro P.

doi:10.1109/jphotov.2015.2409561

Cited by 13 publications

(2 citation statements)

References 69 publications

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“…A further possibility may be the onset of band bending at the interface between Si and the PbO glass layer of the screen-printed contact. 30 In summary, while the P density at the Si surface is not anymore the limiting factor for contacting with low contact resistivity, care must be taken in experiments and in mass production that the emitter is sufficiently deep beneath the contacts. We take this into account in the proposed design of a high-efficiency emitter in Section VI.…”

Section: Contact Formation and Psgsmentioning

confidence: 99%

Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation

Wagner

Dastgheib-Shirazi

Min

et al. 2016

Journal of Applied Physics

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The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl 3 source, is widely used as a dopant source in the manufacturing of crystalline silicon solar cells. Although it has been a widely addressed research topic for a long time, there is still lack of a comprehensive understanding of aspects such as the growth, the chemical composition, possible phosphorus depletion, the resulting in-diffused phosphorus profiles, the gettering behavior in silicon, and finally the metal-contact formation. This paper addresses these different aspects simultaneously to further optimize process conditions for photovoltaic applications. To do so, a wide range of experimental data is used and combined with device and process simulations, leading to a more comprehensive interpretation. The results show that slight changes in the PSG process conditions can produce high-quality emitters. It is predicted that PSG processes at 860 C for 60 min in combination with an etch-back and laser doping from PSG layer results in high-quality emitters with a peak dopant density N peak ¼ 8.0 Â 10 18 cm À3 and a junction depth d j ¼ 0.4 lm, resulting in a sheet resistivity q sh ¼ 380 X/sq and a saturation current-density J 0 below 10 fA/cm 2 . With these properties, the POCl 3 process can compete with ion implantation or doped oxide approaches. Published by AIP Publishing. [http://dx.

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Section: Contact Formation and Psgsmentioning

confidence: 99%

Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation

Wagner

Dastgheib-Shirazi

Min

et al. 2016

Journal of Applied Physics

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“…This is in good agreement with recent simulations on the re-distribution of hydrogen at similar temperatures [11] which predicts that there will be a significant build-up of hydrogen at the metal contacts. The mechanism by which hydrogen might act to increase contact resistance is currently unknown, although possibilities include alteration of the glass between the screen printed silver and the silicon or through interaction with defects and silver crystallites underlying this glass layer [12][13][14][15]. This paper will further explore the phenomenon of increased contact resistance due to post-firing thermal processes.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen induced contact resistance in PERC solar cells

Hamer

Hallam

Bourret‐Sicotte

et al. 2018

Solar Energy Materials and Solar Cells

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The origins of an increase in the series resistance of PERC multicrystalline silicon solar cells due to postfiring thermal processes are investigated. This effect has been shown to be capable of reducing the fill factor of finished cells by up to 20%ABS, severely degrading their performance. It is observed that electric currents applied either during or after these thermal processes can greatly alter the series resistance, either causing RS to increase by more than an order of magnitude or suppressing the effect entirely. It is demonstrated that this behavior is in good agreement with the expected interactions of hydrogen with dopants and electric fields within silicon wafers. It is therefore speculated that at least part of the observed increase in resistance is due to the motion of hydrogen within the cell itself.

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Mechanism investigation on effects of glass composition on Ag/Si contact for crystalline silicon solar cells

Zhang

Sun

Tong

et al. 2021

J Mater Sci: Mater Electron

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Current Transport Through Lead–Borosilicate Interfacial Glass Layers at the Screen–Printed Silver-Silicon Front Contact

Cited by 13 publications

References 69 publications

Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation

Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation

Hydrogen induced contact resistance in PERC solar cells

Mechanism investigation on effects of glass composition on Ag/Si contact for crystalline silicon solar cells

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