Current-voltage characteristic of pulsed space-charge-limited currents in GaAs

Abstract

We introduce a general parametric form of the current-voltage characteristic of space-charge-limited currents (SCLC) in a trap-free material with nonlinear velocity-field (v-F) dependence. An exact solution is obtained for two important v-F models describing the gradual transition from the Mott–Gurney law to the regime of drift-velocity saturation. In particular, we discuss the effect of negative differential mobility on the current-voltage characteristic of SCLC in the high-field region. The theory shows a good agreement with experimental data for low-temperature pulsed SCLC in GaAs.

Structural and electrical properties of SnS2 thin films

“…This phenomenon can be explained by the presence of acceptor centres along with the donor centres in SnS 2 films. Such a structure of charged defects is typical for compensated materials [68] whose properties are close to those of intrinsic semiconductors. The influence of compensation begins to manifest itself at lower temperatures when the concentration of electrons becomes close to the concentration of acceptor impurities.…”

Обобщение Закона Мотта--Гёрни Для Двуслойного Промежутка

“…из которых 4-е условие представляет собой равенство нулю электрического поля в плоскости эмиссии в режиме ограничения плотности тока пространственным зарядом электронов [2,5].…”

“…ЗМГ имеет важное значение для твердотельной электроники и описывает электронный транспорт в неметаллических кристаллах [3,4], в полупроводниках [5,6] и в органических светоизлучающих микроструктурах [7][8][9].…”