Current-voltage characteristics of Ag/TiO2/n-InP/Au Schottky barrier diodes

Abstract

The effect of the TiO2 interfacial layer on rectifying junction parameters of Ag/TiO2/n-InP/Au Schottky diodes has been investigated using current-voltage (I-V) measurements in the temperature range of 120-420 K with steps of 20 K. The barrier height is found to be 0.19 eV and 0.68 eV from current-voltage characteristics at 120 K and 420 K, respectively. At 120 K and 420 K, the ideality factor is found to be 3.52 and 1.01 for the Ag/TiO2/n-InP/Au Schottky barrier diode, respectively. These results are gained by the thermionic emission theory at room temperature. Values of series resistances gained from the Cheung-Cheung method are compared with results gained from a modified Norde method. These experimental results indicate that series resistance decreases with an increase in temperature. The current-voltage (I-V) measurements showed that the diode with the TiO2 interfacial layer gave a double Gaussian property in the examined temperature range. The Richardson constant is also calculated from a modified Richardson plot and is found to be very compatible with the theoretical value. Interface state density is also examined by using I-V characteristics.

Investigation of Electrical and Structural Properties of Ag/TiO2/n-InP/Au Schottky Diodes with Different Thickness TiO2 Interface

“…characteristics. Various current conduction mechanisms such as termionic emission (TE), diffusion, termionic field emission (TFE) may be effective in Schottky structures [13]. For this reason it may be difficult to explain I-V characteristics.…”

Ternary CuCo2S4 Thiospinel Nanocrystal-Coated Photodiode with Improved Photoresponsivity and Acceptance Angles for Optoelectronic Applications

“…The details about calculation via Cheung technique can be find in the literature. [31][32][33] Two R s values are used for proof of the consistency for Cheung's functions. 34 each other and confirmed the consistency of the Cheung technique.…”

TiO2 Interface Instead of SiO2 in Terms of Dielectric Coefficient

“…He found barrier height and ideality factor as 0.414 eV and 1.008 respectively at room temperature [10]. Bilgili et al also investigated electrical properties of Ag/TiO 2 /n-InP Schottky barrier diodes and found barrier height and ideality factor as 0.524 eV and 1.39 respectively at room temperature [11]. These results imply that using an interfacial layer improves diode properties.…”