Current — Voltage characterization of SHI irradiated silicon bipolar power transistor

60 and 100 MeV oxygen ion irradiation effects on electrical characteristics of bipolar transistor

“…This recombination may be due to the destruction of lattice periodicity in the bulk of the semiconductor and may give rise to energy levels in the band gap. Radiationinduced defects may have such energy levels with them that these defects can have a major impact on the electrical characteristics of the transistor [15][16][17][18]. It clearly shows that the decrease in gain in 60 MeV O-ion transistor is drastic, hence depicts that the device is vulnerable for low energy irradiation.…”

“…J J Loerski studied the behavior of germanium transistors in nuclear radiation fields is predicted by combining transistor theory and the experimentally observed changes in irradiated semiconductors, he showed that decay of minority carrier lifetime in the base region usually controls the useful life of transistor in a radiation field. Radiation induced changes of the conductivity place an ultimate limit on transistor life, but these changes occur at a much slower rate than those in minority carrier lifetime [3,4]. Although extensive research and development have been carried out on the radiation induced effects on variety of devices, the mechanism of device degradation and analysis of defect related changes in the electrical characteristics are still important since the nature and extent of damage/degradation depends on many factors.…”

SHI induced damage in electrical properties of silicon NPN BJTs

“…When sufficiently large oxide charge accumulates over the extrinsic base, this leads to significant recombination in the base region. Also it is reported that higher emitter injection efficiency results in the increase in collector current [6]. The common emitter gain h FE = I C / I B versus I C is as shown in Fig.…”