Current-voltage spectroscopy of dopant-induced quantum-dots in heavily n-doped junctionless nanowire transistors

Wang, Hao; Han, Wei; Ma, Liuhong; Li, Xiaoming; Hong, Wenting; Yang, Fuhua

doi:10.1063/1.4870512

Cited by 8 publications

(11 citation statements)

References 14 publications

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“…Previous studies have shown that the blinding energy of the dopants is largely enhanced by the confined environment. [27][28][29] In JNT, the initial conduction path is ultra-narrow, forming enhanced blinding effect. As a consequence, the dopant blinding energy and the charging energy are both enhanced through quantum confinement and dielectric confinement.…”

Section: Resultsmentioning

confidence: 99%

Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors*

Han

Yang

2020

Chinese Phys. B

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The ionized dopants, working as quantum dots in silicon nanowires, exhibit potential advantages for the development of atomic-scale transistors. We investigate single electron tunneling through a phosphorus dopant induced quantum dots array in heavily n-doped junctionless nanowire transistors. Several subpeaks splittings in current oscillations are clearly observed due to the coupling of the quantum dots at the temperature of 6 K. The transport behaviors change from resonance tunneling to hoping conduction with increased temperature. The charging energy of the phosphorus donors is approximately 12.8 meV. This work helps clear the basic mechanism of electron transport through donor-induced quantum dots and electron transport properties in the heavily doped nanowire through dopant engineering.

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Section: Resultsmentioning

confidence: 99%

Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors*

Han

Yang

2020

Chinese Phys. B

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“…The onset gate voltage V gt increases from 6 K to 20 K and decreases from 100 K to 250 K, resulting from the interaction of the induced image charges in the dielectric interface with the impurity and the subband states in the channel. [13] To explore the conductance characteristics under the same filled energy level, we take the onset gate voltage V gt to unify the transfer characteristics in Fig. 2(a) for the alignment of energy levels at different temperatures.…”

Section: Resultsmentioning

confidence: 99%

“…[6][7][8][9] As the channel width of the silicon transistor is scaled down to several nanometers, few ionized dopant atoms randomly distributed in the channel can work as quantum dots (QDs) and play a significant role in the electron transport behaviors. [10][11][12][13][14] In recent years, singleelectron tunneling through the dopant-induced QD array has attracted much attention in the study of the silicon junctionless nanowire transistors (JNTs), which may provide a onedimensional bulk channel with an adjustable width by the gate electric field. [7,15,16] The conducting path in the center of the silicon nanowire, which is effectively confined by the surface depletion potentials, can be gradually broadened to the whole conduction channel region with the increase of the gate voltage.…”

Section: Introductionmentioning

confidence: 99%

Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors*

Guo¹,

Han²,

Zhao³

et al. 2019

Chinese Phys. B

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We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance characteristics. There are two obvious transition platforms within the critical temperature regimes for the experimental conductance data, which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance g m peak in V g1 and valley in V g2. The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages V g1 and V g2. This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.

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“…We have studied the current-voltage spectroscopies of dopant-induced quantum dots in single-channel and multiplechannel n-doped junctionless nanowire transistors (JNTs) [42,43] . There is nearly the identical size of dopant-induced QDs and the similar inter-QD coupling effect in single-channel and multiple-channel JNTs.…”

Section: Coupling Of Dopant-induced Quantum Dotsmentioning

confidence: 99%

Dopant atoms as quantum components in silicon nanoscale devices

et al. 2018

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Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics.

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Current-voltage spectroscopy of dopant-induced quantum-dots in heavily n-doped junctionless nanowire transistors

Cited by 8 publications

References 14 publications

Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors*

Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors*

Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors*

Dopant atoms as quantum components in silicon nanoscale devices

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