Current–voltage–temperature characteristics of PEDOT:PSS/ZnO thin film-based Schottky barrier diodes

Abstract

In this work, we report the temperature dependence of the electrical parameters of PEDOT:PSS/ ZnO Schottky barrier diodes (SBDs) grown on glass substrates. To understand the current conduction mechanism, the current-voltage-temperature characteristics of PEDOT:PSS/ZnO thin film SBDs were studied. The electrical parameters were extracted with both thermionic emission and Cheung models. The obtained Richardson constant and effective barrier height were 5 A cm −2 °K−2 and 0.74 eV, respectively. The diode ideality factor was 1.5 and the series resistance was 36 Ω. All these electrical parameters turned out to be temperature independent which was associated with the dominant transport mechanisms of thermionic emission. The Richardson constant slightly deviates from theoretical values due to the presence of interfacial defects created by the preparation and deposition of PEDOT:PSS and the ZnO film crystallinity. The conductive polymer PEDOT:PSS, as a Schottky contact to ZnO, arises as an alternative to the expensive noble metals: Pt, Pd, Ag and metal oxides: IrOx, PdOx, PtOx.

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

“…Thus, a rational choice of n-type or p-type semiconductor materials to form n-n or n-p heterojunctions with ZnO NWs/NRs is important, which defines the strength of the internal electric field. In addition to the above-mentioned ZnO-based all-inorganic p-n heterojunctions, some p-type organic materials such as PEDOT:PSS [58], Spiro-MeOTAD [59], and P 3 HT [60] have also been used to form p-n heterojunctions with ZnO NWs/NRs.…”

Influence of Surface Polarity on Optoelectronic Properties of PEDOT:PSS/ZnO Hybrid Heterojunctions

“…A similar approach was applied by other groups, for the junctions formed between PEDOT:PSS and ZnO thin films. [ 19,20 ] Nevertheless, such devices showed a deviation from the ideal diode behavior, which was associated with the lower quality of the polycrystalline ZnO film [ 19,20 ] or with the uncontrolled PEDOT:PSS etching of the ZnO film. [ 19,20 ] The ZnO/PEDOT:PSS junction can be also considered as an abrupt junction between n‐ and p‐type semiconductor regions.…”

“…[ 19,20 ] Nevertheless, such devices showed a deviation from the ideal diode behavior, which was associated with the lower quality of the polycrystalline ZnO film [ 19,20 ] or with the uncontrolled PEDOT:PSS etching of the ZnO film. [ 19,20 ] The ZnO/PEDOT:PSS junction can be also considered as an abrupt junction between n‐ and p‐type semiconductor regions. The understanding of charge transport mechanisms in such junctions is still incomplete, and systematic analysis of such junctions is essential for a deeper understanding of the physical phenomena occurring at the interface between organic and inorganic materials as well as for their potential optoelectronic applications.…”

Electrochemical Preparation of ZnO/PEDOT‐Type Conducting Polymers Composites for Ultraviolet Photodetector

“…[22,23] ZnO/conducting polymer hybrid structures have shown a rectifying behavior mainly resulting from the formation of a p-n junction between the ptype conducting polymer film and the n-type ZnO nanorods. [24,25] This type of ZnO/conducting polymer-based UV detector have shown excellent photosensing properties under ultraviolet illumination due to the separation of photogenerated electrons from the ZnO/conductive polymer interface and passivation of oxygen vacancies on the ZnO surface . [26] The commonly used methods for preparing ZnO/conductive polymer composite materials for assembling UV detectors include suspension coating, drip coating, knife coating, solution polymerization, surface coating, vacuum evaporation, etc.…”