Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding

Abstract

Curvature evolution of 200 mm diameterGaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding

Unlocking the origin of compositional fluctuations in InGaN light emitting diodes

“…Figure 1a shows a cross-section of the LED device used in this investigation, which follows the fabrication protocol by Zhang et al 47 and is discussed in the method section. The sample contained three sets of quantum wells, each set consisting of three alternating InGaN QWs and GaN barrier layers with thickness 3 nm and 10 nm, respectively.…”

“…Notably, the description of the compositional fluctuations by CMC in the epitaxially coherent QWs is best described by lower temperature models (~1000 K) compared to the bulk incoherent system found at higher temperatures (~1575 K). This temperature decrease can be linked to the bi-axial strain experienced by the InGaN QW, which are typically grown at ~ 1000 K. 47 The intrinsic tendency of the InGaN QWs for compositional fluctuations is also reflected by the computational data. For all temperatures the simulations consistently Although the seminal phase diagram proposed by Karpov predicts In solubility in the range 0 < x < 35 % and at low temperatures, our findings remain in striking contrast 55 .…”

“…The LED devices were prepared based on the recipe by Zhang et al 47 as the precursors for Al, Ga, In and N respectively. Furthermore, the growth process was carried out in H2 ambient condition.…”

High-frequency AlGaN/GaN T-gate HEMTs on extreme low resistivity silicon substrates

“…[1][2][3][4] Compared with other conventional semiconductor materials, the GaN-on-Si HEMTs can offer remarkable higher power performance with a much lower cost owing to the large dimension silicon wafers with the advanced GaN epitaxial technology. [5][6][7] The low cost and high performance of GaN-on-Si devices have been a strong motivation for related research over the past few years. Most of the early researches are based on the silicon substrate with high resistivity such as 6 kΩ cm for RF applications.…”