A novel wire bonded GaN rectifier for high-power wireless power transfer (WPT) applications is proposed. The low breakdown voltage in silicon Schottky diodes limits the high-power operations of microwave rectifier. The proposed microwave rectifier consists of a high breakdown voltage GaN rectifying element for high-power operation and a novel low loss impedance matching technique for high efficiency performance. Wire bonding method is adopted to provide electrical connection between GaN chip and board which induces undesirable inductance. In order to realize high efficiency performance, an impedance matching network is proposed to exploit the unavoidable inductance along with a single shunt capacitor, resulting in a low loss matching circuit to achieve a compact high-power rectifier. The fabricated GaN rectifier exhibits a good performance in the high-power region and can withstand up to 39 dBm input power before reaching the breakdown limit at the operating frequency of 0.915 GHz and load resistance of 100. It has a compact size and exhibits high efficiency performance in high-power region (achieved a maximum efficiency of 61.2% at 39 dBm), making it suitable for high-power applications like future unmanned intelligent devices and WPT in space applications. INDEX TERMS GaN, high-power rectifier, microwave rectifier, rectenna, wire bonding, wireless power transfer (WPT).

This work presents the design, fabrication, and analysis of GaN Schottky barrier diodes with multi-finger structure on the silicon substrate using various layout parameters, aiming for RF energy harvesting applications. The measured results demonstrate a low turn-on voltage (V on ) and a high breakdown voltage (V BK ) of 0.56 V and 47 V, respectively. A high cut-off frequency ( f c ) of 360.9 GHz under reverse bias of −10 V is also obtained for a two-finger device with each finger of W = 12.5 μm and L = 0.2 μm.

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The T-gate high frequency AlGaN/GaN high electron mobility transistors (HEMTs) are demonstrated on an 8 inch extremely-low resistivity (ELR) silicon substrate with a resistivity of ∼2.5 mΩ cm to investigate the potential of using the ELR Si substrate for RF applications. The devices are also fabricated on the 60 Ω cm substrate for comparison. The 0.1 μm T-gate is realized by e-beam lithography to improve the high frequency characteristics of the devices. The short-circuit current gain cutoff frequency (fT), the maximum oscillation frequency (fmax), and maximum transconductance (gm,max) of 27 GHz, 71 GHz and 247 mS mm−1 can be achieved, respectively. The obtained high frequency performance is among the best reported to date for the GaN HEMTs on such low resistivity silicon substrates.