Low turn-on voltage and high breakdown GaN Schottky barrier diodes for RF energy harvesting applications

Abstract

This work presents the design, fabrication, and analysis of GaN Schottky barrier diodes with multi-finger structure on the silicon substrate using various layout parameters, aiming for RF energy harvesting applications. The measured results demonstrate a low turn-on voltage (V on ) and a high breakdown voltage (V BK ) of 0.56 V and 47 V, respectively. A high cut-off frequency ( f c ) of 360.9 GHz under reverse bias of −10 V is also obtained for a two-finger device with each finger of W = 12.5 μm and L = 0.2 μm.

Giant Stark effect assisted radio frequency energy harvesting using atomically thin earth-abundant iron sulphide (FeS2)

“…Developing a device with a low turn-on voltage without additional electronic components is advantageous for a miniaturised energy harvesting system. 15 In addition, given the environmental implications associated with the use of materials like selenides and lead, there is a necessity for exploring alternative eco-friendly materials to pave the way for a sustainable future. One such material of interest is iron sulfide (FeS 2 )/pyrite.…”