2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) 2019
DOI: 10.1109/comcas44984.2019.8958115
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CVD diamond films for thermal management applications

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Cited by 2 publications
(2 citation statements)
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“…(The growth rate of diamond films deposited at 850 • C is ∼10 µm h −1 , which decreased to 500 nm h −1 for the film deposited at 300 • C.) But diamond deposition at low temperatures (<300 • C) would facilitate the direct integration of microelectronic devices with diamond, which is beneficial for better thermal management in high power electronic/optoelectronic (e.g. GaN LEDs) devices [60,61]. Despite the several advantages, the films deposited using MPCVD possess high intrinsic stress, compared to the films deposited using HFCVD.…”
Section: Microwave Plasma Cvdmentioning
confidence: 99%
“…(The growth rate of diamond films deposited at 850 • C is ∼10 µm h −1 , which decreased to 500 nm h −1 for the film deposited at 300 • C.) But diamond deposition at low temperatures (<300 • C) would facilitate the direct integration of microelectronic devices with diamond, which is beneficial for better thermal management in high power electronic/optoelectronic (e.g. GaN LEDs) devices [60,61]. Despite the several advantages, the films deposited using MPCVD possess high intrinsic stress, compared to the films deposited using HFCVD.…”
Section: Microwave Plasma Cvdmentioning
confidence: 99%
“…It is also an unrivaled choice as heat management device due to the very high thermal conductivity of diamond. Grown films can be placed directly over heat generating electronic devices or even diamond layers can be directly deposited over semiconducting components so the heat is promptly spread out of the hot spots 27 .…”
Section: Introductionmentioning
confidence: 99%