CVD Growth of 3C‐SiC on 4H/6H Mesas

Neudeck, Philip G.; Trunek, Andrew J.; Spry, David J.; Powell, J. A.; Du, Hui; Skowroński, Marek; Huang, Xiaolong; Dudley, Michael

doi:10.1002/cvde.200506460

Cited by 65 publications

(78 citation statements)

References 33 publications

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“…23,24 Initial results of the effect of the graphite spacer opening shape in 3C-SiC nucleation using sublimation epitaxy on low off-axis 6H-SiC substrates have been also shown. 25 Here we explore a geometrical control and demonstrate that different spacer shaping can be applied to promote formation of only one 3C-SiC domain that enlarges and completely covers the surface of the epilayer.…”

Section: Geometrically Controlled Lateral Enlargementmentioning

confidence: 99%

Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates

Jokubavičius

Yazdi

Liljedahl

et al. 2015

Crystal Growth & Design

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We investigated the formation of structural defects in thick (~ 1mm) 3C-SiC layers grown on off-oriented 4H-SiC substrates via lateral enlargement mechanism using different growth conditions. A two-step growth process based on this technique was developed, which provides a trade-off between the growth rate and the number of defects in the 3C-SiC layers. Moreover, we demonstrated that the twostep growth process combined with geometrically controlled lateral enlargement mechanism allows formation of single 3C-SiC domain which enlarges and completely covers the substrate surface. High crystalline quality of the grown 3C-SiC layers is confirmed using high resolution x-ray diffraction and low temperature photoluminescence measurements. ABSTRACTWe investigated the formation of structural defects in thick (~ 1mm) 3C-SiC layers grown on off-oriented 4H-SiC substrates via lateral enlargement mechanism using different growth conditions. A two-step growth process based on this technique was developed, which provides a trade-off between the growth rate and the number of defects in the 3C-SiC layers. Moreover, we 3 demonstrated that the two-step growth process combined with geometrically controlled lateral enlargement mechanism allows formation of single 3C-SiC domain which enlarges and completely covers the substrate surface. High crystalline quality of the grown 3C-SiC layers is confirmed using high resolution x-ray diffraction and low temperature photoluminescence measurements.

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Section: Geometrically Controlled Lateral Enlargementmentioning

confidence: 99%

Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates

Jokubavičius

Yazdi

Liljedahl

et al. 2015

Crystal Growth & Design

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“…The DPBs defects emerge unfortunately. The elimination of this kind of defects becomes a hot research topic [68][69][70][71][72][73].…”

Section: The Aspect Of 3c-sic Epitaxymentioning

confidence: 99%

CVD solutions for new directions in SiC and GaN epitaxy

Li¹

2015

Linköping Studies in Science and Technology. Dissertations

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This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. SiC is a promising wide band gap semiconductor material which could be utilized for fabricating high-power and high-frequency devices. 3C-SiC is the only polytype with a cubic structure and has superior physical properties over other common SiC polytypes, such as high hole/electron mobility and low interface trap density with oxide. Due to lack of commercial native substrates, 3C-SiC is mainly grown on the cheap silicon (Si) substrates. However, there’s a large mismatch in both lattice constants and thermal expansion coefficients leading to a high density of defects in the epitaxial layers. In paper 1, the new CVD solution for growing high quality double-position-boundaries free 3C-SiC using on-axis 4H-SiC substrates is presented. Reproducible growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H2 ratio, N2 addition and pressure, are covered in this study. GaN is another attractive wide band gap semiconductor for power devices and optoelectronic applications. In the GaN-based transistors, carbon is often exploited to dope the buffer layer to be semi-insulating in order to isolate the device active region from the substrate. The conventional way is to use the carbon atoms on the gallium precursor and control the incorporation by tuning the process parameters, e.g. temperature, pressure. However, there’s a risk of obtaining bad morphology and thickness uniformity if the CVD process is not operated in an optimal condition. In addition, carbon source from the graphite insulation and improper coated graphite susceptor may also contribute to the doping in a CVD reactor, which is very difficult to be controlled in a reproducible way. Therefore, in paper 2, intentional carbon doping of (0001) GaN using six hydrocarbon precursors, i.e. methane (CH4), ethylene (C2H4), acetylene (C2H2), propane (C3H8), iso-butane (i-C4H10) and trimethylamine (N(CH3)3), have been explored. In paper 3, propane is chosen for carbon doping when growing the high electron mobility transistor (HEMT) structure on a quarter of 3-inch 4H-SiC wafer. The quality of epitaxial layer and fabricated devices is evaluated. In paper 4, the behaviour of carbon doping using carbon atoms from the gallium precursor, trimethylgallium (Ga(CH3)3), is explained by thermochemical and quantum chemical modelling and compared with the experimental results. GaN is commonly grown on foreign substrates, such as sapphire (Al2O3), Si and SiC, resulting in high stress and high threading dislocation densities. Hence, bulk GaN substrates are preferred for epitaxy. In paper 5, the morphological, structural and luminescence properties of GaN epitaxial layers grown on N-face free-standing GaN substrates are studied since the N-face GaN has advantageous characteristics compared to the Ga...

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“…These are called twins. The boundaries between the twins are known as twin boundaries (TBs), which are extended defects [5]. Other common defects in cubic SiC are stacking faults (SFs) and 6H-SiC inclusions.…”

Section: Growth Of Cubic Sicmentioning

confidence: 99%

“…Therefore from the point of view of the general prerequisites for epitaxy, 6H-SiC appears to be a perfect substrate for growth of cubic SiC [3][4][5][6].…”

mentioning

confidence: 99%

Cubic SiC formation on the C-face of 6H–SiC (0001) substrates

Vasiliauskas¹,

Juillaguet²,

Syväjärvi³

et al. 2012

Journal of Crystal Growth

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Abstract. Nucleation and subsequent growth of cubic SiC (111) on Si-and C-faces of nominally on-axis 6H-SiC substrates was investigated. More uniform nuclei and twin boundary distribution was observed when 3C-SiC was grown on the C-face. This was attributed to a lower critical supersaturation ratio. A new type of defects which appear as pits in the C-face 3C-SiC layers related to homoepitaxial 6H-SiC spiral growth was found and described. The evaluation of the growth driving force for both polar faces showed that the homoepitaxial 6H-SiC spirals were not overgrown on the C-face due to low maximum supersaturation ratio. The XRD ω-rocking characterization shows a better structural quality of the 3C-SiC was grown on the Si-face, however on the C-face the uniformity over the whole sample was higher. Unintentional doping by N (~10 16 cm -3 ) was slightly higher on the C-face while Al doping was higher (~10 14 cm -3 ) on the Si-face of the grown material, similarly to the doping of hexagonal SiC polytypes.

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CVD Growth of 3C‐SiC on 4H/6H Mesas

Cited by 65 publications

References 33 publications

Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates

Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates

CVD solutions for new directions in SiC and GaN epitaxy

Cubic SiC formation on the C-face of 6H–SiC (0001) substrates

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