CVD of copper using copper(I) and copper(II) β-diketonates

Naik, Mehul; Gill, William N.; Wentorf, R. H.; Reeves, Robert

doi:10.1016/0040-6090(95)05840-0

Cited by 50 publications

(35 citation statements)

References 10 publications

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“…3(b)]. Hydrogen may lead to both the formation of stable volatile organic compounds and the reduction of copper [18]- [21]. As a result, with the addition of H , crystalline metallic films can be prepared.…”

Section: Resultsmentioning

confidence: 97%

Copper thin films on PET prepared at ambient temperature by ECR-CVD

Jhin

Byun

et al. 2005

IEEE Trans. Comp. Packag. Technol.

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Metallized polymers were prepared at ambient temperature by an electron-cyclotron-resonance (ECR) chemical vapor deposition system equipped with ( )DC bias from the Cu(hfac) 2 -Ar-H 2 system. X-ray difraction (XRD) results showed that the Cu (111) peaks were clearly observed when H 2 was introduced to the plasma. The surface morphology showed that larger Cu grains were formed in the metal-organic composite films with the introduction of H 2 to the plasma. AES depth profiles showed that H 2 gas introduction to the plasma led to the formation of copper-rich films with a homogeneous composition. Also, the sheet resistance was strongly dependent on the H 2 content of the plasma. This means that hydrogen may lead to both the formation of stable volatile organic compounds and the reduction of copper, which influences both the crystallographic structure and the composition of films. As a result, crystalline copper films with a sheet resistance of 2-3 2 can be prepared on poly ethylene terephthalate with the addition of H 2 to the plasma.Index Terms-Cu(hfac) 2 , electron-cyclotron-resonance chemical vapor deposition (ECR-CVD), poly ethylene terephthalate (PET), plasma, sheet resistance.

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Section: Resultsmentioning

confidence: 97%

Copper thin films on PET prepared at ambient temperature by ECR-CVD

Jhin

Byun

et al. 2005

IEEE Trans. Comp. Packag. Technol.

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“…This leads to a very low surface nucleus density at the beginning of deposition because there exists an incubation time. [12,13] The precursor molecules diffused and decomposed onto the surface as the deposition progressed, and the nucleus density significantly increased. At substrate temperatures above 330°C, the CVD process is within the mass-transfer-controlled regime.…”

Section: Evolution Of Surface Morphologymentioning

confidence: 99%

Characterization of Chemical Vapor Deposited Copper Films on Mercaptan Self-Assembled Monolayer Diffusion Barriers

Liu

Wang

2006

Chem. Vap. Deposition

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Copper thin films are produced by CVD using the precursor Cu II bis-hexafluoroacetylacetonate [Cu II (hfac) 2 ], on the self-assembled monolayers of a 3-mercaptopropyltrimethoxysilane (MPTMS) modified substrate. The microstructures of the deposited copper films are characterized by various surface analysis techniques, such as scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The film resistivity was also measured using the fourprobe method. The results of the measurements indicate that the microstructures of copper thin film are strongly dependent on the substrate temperature during film deposition. The copper thin films deposited have a resistivity as low as 2.1 lX cm in the temperature range 290-350°C. These results indicate that the CVD of copper film on a mercaptan SAM diffusion barrier is a potential technique for copper multilevel metallization.

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“…Hydrogen gradually decomposes the metallic precursor into smaller fragments which are CH 3 + , CH 3 CO + , and COCH 2 COCH + ions [21][22][23][24] . To provide a general picture of copper deposition in the pore of SBA-15 coated with carbon, deposition mechanism of copper is suggested, as displayed in Fig.…”

Section: Characterizationmentioning

confidence: 99%

Fabrication of copper nanorods by low-temperature metal organic chemical vapor deposition

Zhang

Lam

et al. 2006

CHINESE SCI BULL

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Copper nanorods have been synthesized in mesoporous SBA-15 by a low-temperature metal organic chemical vapor deposition (MOCVD) employing copper (II) acetylacetonate, Cu(acac) 2 , and hydrogen as a precursor and reactant gas, respectively. The hydrogen plays an important role in chemical reduction of oganometallic precursor which enhances mass transfer in the interior of the SBA-15 porous substrate. Such copper nanostructures are of great potentials in the semiconductor due to their unusual optical, magnetic and electronic properties. In addition, it has been found that chemically modifying the substrate surface by carbon deposition is crucial to such synthesis of copper nanostructures in the interior of the SBA-15, which is able to change the surface properties of SBA-15 from hydrophilic to hydrophobic to promote the adsorption of organic cupric precursor. It has also been found that the copper nanoparticles deposited on the external surface are almost eliminated and the copper nanorods are more distinct while the product was treated with ammonia. This approach could be achieved under a mild condition: a low temperature (400℃) and vacuum (2 kPa) which is extremely milder than the conventional method. It actually sounds as a foundation which is the first time to synthesize a copper nanorod at a mild condition of a low reaction temperature and pressure.

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CVD of copper using copper(I) and copper(II) β-diketonates

Cited by 50 publications

References 10 publications

Copper thin films on PET prepared at ambient temperature by ECR-CVD

Copper thin films on PET prepared at ambient temperature by ECR-CVD

Characterization of Chemical Vapor Deposited Copper Films on Mercaptan Self-Assembled Monolayer Diffusion Barriers

Fabrication of copper nanorods by low-temperature metal organic chemical vapor deposition

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