CVD of SiC from Methyltrichlorosilane. Part II: Composition of the Gas Phase and the Deposit

Zhang, Weigang G.; Hüttinger, Klaus J.

doi:10.1002/1521-3862(200107)7:4<173::aid-cvde173>3.0.co;2-x

Cited by 60 publications

(56 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Such chemical reactions are derived in the work of Zhang and Huettinger (see [9]; for the available data, see [10]). In the following, we present the underlying reaction equations in the microscopic scales.…”

Section: Microscopic Model For the Reaction Partmentioning

confidence: 79%

Multiscale Modeling of Chemical Vapor Deposition (CVD) Apparatus: Simulations and Approximations

Geiser

2013

Polymers

View full text Add to dashboard Cite

Abstract:We are motivated to compute delicate chemical vapor deposition (CVD) processes. Such processes are used to deposit thin films of metallic or ceramic materials, such as SiC or a mixture of SiC and TiC. For practical simulations and for studying the characteristics in the deposition area, we have to deal with delicate multiscale models. We propose a multiscale model based on two different software packages. The large scales are simulated with computational fluid dynamics (CFD) software based on the transportreaction model (or macroscopic model), and the small scales are simulated with ordinary differential equations (ODE) software based on the reactive precursor gas model (or microscopic model). Our contribution is to upscale the correlation of the underlying microscale species to the macroscopic model and reformulate the fast reaction model. We obtain a computable model and apply a standard CFD software code without losing the information of the fast processes. For the multiscale model, we present numerical results of a real-life deposition process.

show abstract

Section: Microscopic Model For the Reaction Partmentioning

confidence: 79%

Multiscale Modeling of Chemical Vapor Deposition (CVD) Apparatus: Simulations and Approximations

Geiser

2013

Polymers

View full text Add to dashboard Cite

show abstract

“…A chemical model of these processes is presented in Part II. [43] The volumes, V R , of the three investigated substrates are nearly the same (see Tab. 1).…”

Section: Resultsmentioning

confidence: 98%

“…Corresponding compositions of the product gases and of the deposits are presented and discussed in Part II. [43] At a temperature of 800 C, the deposition rates increase as a function of substrate length ( Fig. 1a).…”

Section: Resultsmentioning

confidence: 99%

“…[31,32] A more detailed discussion of the deposition chemistry is presented in Part II. [43] The results of Figure 2 are important for two reasons. First of all, they show that deposition of SiC is based on low-and high-temperature processes.…”

Section: Discussionmentioning

confidence: 99%

“…Composition of the gas phase and the deposit, as well as a model of the process, will be presented in Part II of the paper. [43] …”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

CVD of SiC from Methyltrichlorosilane. Part I: Deposition Rates

Zhang

Hüttinger²

2001

Chem. Vap. Deposition

Self Cite

View full text Add to dashboard Cite

The CVD of silicon carbide from methyltrichlorosilane (MTS) was studied at various surface area/volume ratios, using an MTS/H 2 mixture of 1:4. The total pressure was 90 kPa; the temperature was varied from 800 C to 1100 C at residence times of 0.9 s and 0.4 s. Steady-state deposition rates were determined as a function of reactor length. The deposition rate as a function of temperature, investigated at a low surface area/volume ratio, shows strong and weak intermediate maxima at temperatures of about 900 C and 1025 C, respectively. These maxima decrease at increasing surface area/volume ratio, leading to a continuous increase of the deposition rate at a sufficiently high surface area/volume ratio. A chemical model based on analyses of the deposits and the gas phase compositions is presented in Part II.

show abstract

Thermodynamics of the Production of Condensed Phases in the CVD of Methyltrichlorosilane Pyrolysis

Deng

Zeng

et al. 2009

Chemical Vapor Deposition

View full text Add to dashboard Cite

Production conditions of the condensed phases (b-SiC, silicon, and graphite) in the CVD of methyltrichlorosilane (MTS) pyrolysis are investigated in detail with thermodynamic analyses based on a relatively complete and refined database. Production of the condensed phases is examined as a function of temperature, pressure, and the initial gas ratio of H 2 / MTS. The results show that the composition of the condensed phase is quite sensitive to both temperature and the molar ratio of H 2 /MTS, whereas it is less sensitive to pressure. The ideal conditions for the deposition of b-SiC are temperatures between 1300 and 1500 K, H 2 /MTS ratios between 10 and 10 5 , and with pressures as low as convenient. The co-deposition of C or Si with b-SiC is mainly controlled by the ratio of H 2 /MTS. The co-deposition of C with b-SiC should be in low H 2 /MTS ratios (<10) and the codeposition of Si with b-SiC needs high H 2 /MTS ratios (>10 4 ). The results are in very good agreement with experimental findings and previous theoretical investigations. The present work is also instructive as to the experimental conditions relating to continuous regions of temperatures, pressures, and the H 2 /MTS ratios.

show abstract

CVD of SiC from Methyltrichlorosilane. Part II: Composition of the Gas Phase and the Deposit

Cited by 60 publications

References 14 publications

Multiscale Modeling of Chemical Vapor Deposition (CVD) Apparatus: Simulations and Approximations

Multiscale Modeling of Chemical Vapor Deposition (CVD) Apparatus: Simulations and Approximations

CVD of SiC from Methyltrichlorosilane. Part I: Deposition Rates

Thermodynamics of the Production of Condensed Phases in the CVD of Methyltrichlorosilane Pyrolysis

Contact Info

Product

Resources

About