CVD of SiC from Methyltrichlorosilane. Part I: Deposition Rates

Zhang, Weigang G.; Hüttinger, Klaus J.

doi:10.1002/1521-3862(200107)7:4<167::aid-cvde167>3.0.co;2-l

Cited by 45 publications

(43 citation statements)

References 25 publications

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“…[1] These temperatures correspond to a residence time of 0.9 s; the rate maxima being shifted to higher temperatures if the residence time is decreased or the flow rate is increased. Furthermore, it was shown that the rate maxima only exist at a low [A S /V R ] ratio.…”

Section: Discussionmentioning

confidence: 99%

“…The results of Figure 4 may be used to determine individual deposition rates of SiC and Si from the measured or overall rates reported in Figure 1 of Part I. [1] They are presented in Figure 6 for the low [A S /V R ] ratio of 0.78 mm ±1 , and in Figure [1] ). This presentation was chosen to demonstrate changes of deposition rate along the substrate.…”

Section: Discussionmentioning

confidence: 99%

“…These show the concentration in mole percent as a function of temperature, to facilitate a comparison with the deposition rates reported in Part I. [1] The influence of residence time can be briefly summarized from the results of Table 1. A significant decrease of MTS concentration could only be determined at 850 C and 900 C. At 950 C, it is nearly decomposed at 0.3 s. Decreasing the concentration of MTS at 850 C and 900 C corresponds to increasing the concentrations of CH 4 , HSiCl 3 , and SiCl 4 .…”

Section: Gas Phase Compositionmentioning

confidence: 92%

“…The gas phase composition as a function of residence time was studied at a 1:4 mixture of MTS/H 2 , [A S /V R ] ratios of 0.78 mm ±1 and 3.55 mm ±1 , and temperatures ranging from 850 C to 1100 C. Deviating from the CVD experiments reported in Part I, [1] these studies were performed under an ambient pressure of about 100 kPa, because a reduced pressure injection system was not available. The results are compiled in Table 1.…”

Section: Gas Phase Compositionmentioning

confidence: 99%

“…[1] Deposition rates were determined as a function of substrate length. The influence of [A S /V R ] ratio is significant, as has been postulated in a previous paper.…”

Section: Introductionmentioning

confidence: 99%

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CVD of SiC from Methyltrichlorosilane. Part II: Composition of the Gas Phase and the Deposit

Zhang

Hüttinger²

2001

Chem. Vap. Deposition

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Part I of the paper was concerned with the influence of the surface area/volume ratio, [A S /V R ], temperature, and residence time on the deposition rate of silicon carbide from a 1:4 methyltrichlorosilane (MTS)/hydrogen mixture. In Part II, the composition of the gas phase and the deposit are investigated. It is shown that deposition rate maxima at about 900 C and 1025 C, frequently reported in the literature, result from a temperature-selective deposition of both SiC and Si. This selectivity is determined by the [A S /V R ] ratio because it controls the interaction of the gas phase and surface reactions. At a sufficiently high [A S /V R ] ratio, deposition of free silicon is completely suppressed and the rate maxima disappear simultaneously. Increasing the temperature generally favors deposition of stoichiometric silicon carbide. Results for the gas phase composition are used to discuss changes of gas phase chemistry responsible for the deposition of free silicon, as well as of stoichiometric silicon carbide. Higher chlorosilanes, as well as carbochlorosilanes, are postulated as intermediates of silicon and silicon carbide deposition, respectively.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Gas Phase Compositionmentioning

confidence: 92%

Section: Gas Phase Compositionmentioning

confidence: 99%

“…[1] Deposition rates were determined as a function of substrate length. The influence of [A S /V R ] ratio is significant, as has been postulated in a previous paper.…”

Section: Introductionmentioning

confidence: 99%

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CVD of SiC from Methyltrichlorosilane. Part II: Composition of the Gas Phase and the Deposit

Zhang

Hüttinger²

2001

Chem. Vap. Deposition

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Chemical Vapor Deposition and Characterization of Thick Silicon Carbide Tubes for Nuclear Applications

Drieux

Chollon

Allemand

et al. 2013

Ceramic Transactions Series

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SiC/SiC composites have an outstanding mechanical behavior under irradiation, but their high porosity excludes their use as nuclear fuel claddings in the future nuclear power plants. A complementary thick and tight SiC sheath could be a solution to ensure the first barrier towards fissile materials. The aim of this work is to make long, free standing and high strength SiC tubes. A few hundred micrometers thick tubular coatings were produced by chemical vapor deposition at atmospheric pressure, from CH3SiHCl2/Ar/H2 mixtures. Their chemical compositions and microstructures were studied by electron probe microanalysis, Raman spectroscopy and scanning electron microscopy. The deposition rate, composition and microstructure were investigated as a function of the substrate temperature and the gas flow rates. A Fourier transformed infrared spectroscopy analysis of the gas phase was carried out at the reactor outlet. The Si/C ratio, the SiC degree of crystallization and the surface morphology are strongly related to the maturation of the gas phase and the deposition regime.

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Calendering‐Compatible Macroporous Architecture for Silicon–Graphite Composite toward High‐Energy Lithium‐Ion Batteries

et al. 2020

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Porous strategies based on nanoengineering successfully mitigate several problems related to volume expansion of alloying anodes. However, practical application of porous alloying anodes is challenging because of limitations such as calendering incompatibility, low mass loading, and excessive usage of nonactive materials, all of which cause a lower volumetric energy density in comparison with conventional graphite anodes. In particular, during calendering, porous structures in alloying‐based composites easily collapse under high pressure, attenuating the porous characteristics. Herein, this work proposes a calendering‐compatible macroporous architecture for a Si–graphite anode to maximize the volumetric energy density. The anode is composed of an elastic outermost carbon covering, a nonfilling porous structure, and a graphite core. Owing to the lubricative properties of the elastic carbon covering, the macroporous structure coated by the brittle Si nanolayer can withstand high pressure and maintain its porous architecture during electrode calendering. Scalable methods using mechanical agitation and chemical vapor deposition are adopted. The as‐prepared composite exhibits excellent electrochemical stability of >3.6 mAh cm−2, with mitigated electrode expansion. Furthermore, full‐cell evaluation shows that the composite achieves higher energy density (932 Wh L−1) and higher specific energy (333 Wh kg−1) with stable cycling than has been reported in previous studies.

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CVD of SiC from Methyltrichlorosilane. Part I: Deposition Rates

Cited by 45 publications

References 25 publications

CVD of SiC from Methyltrichlorosilane. Part II: Composition of the Gas Phase and the Deposit

CVD of SiC from Methyltrichlorosilane. Part II: Composition of the Gas Phase and the Deposit

Chemical Vapor Deposition and Characterization of Thick Silicon Carbide Tubes for Nuclear Applications

Calendering‐Compatible Macroporous Architecture for Silicon–Graphite Composite toward High‐Energy Lithium‐Ion Batteries

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