1997
DOI: 10.1039/a608525c
|View full text |Cite
|
Sign up to set email alerts
|

CVD preparation and characterization of tin dioxide films for electrochemical applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
14
0
3

Year Published

2005
2005
2020
2020

Publication Types

Select...
10

Relationship

0
10

Authors

Journals

citations
Cited by 50 publications
(17 citation statements)
references
References 25 publications
0
14
0
3
Order By: Relevance
“…In particular, tin oxide films are stable at high temperatures, have excellent resistance to strong acids and bases at room temperature, are resistant to mechanical wear, and have very good adhesion to many substrates [2,3]. Thus, transparent and electrically conductive stannic oxide films are widely used for a variety of applications.…”
Section: Introductionmentioning
confidence: 98%
“…In particular, tin oxide films are stable at high temperatures, have excellent resistance to strong acids and bases at room temperature, are resistant to mechanical wear, and have very good adhesion to many substrates [2,3]. Thus, transparent and electrically conductive stannic oxide films are widely used for a variety of applications.…”
Section: Introductionmentioning
confidence: 98%
“…At low Sb doping level, ATO has properties of transparency at the visible region with good conductivity, while reflecting infrared light. These characteristics enable ATO to be used as a transparent electrode for electrochemical devices [8], displays [9], and heat mirrors and energy storage devices [10]. Heavily doped ATO is a good catalyst for the oxidation of phenol and olefin [11] and the dehydrogenation and ammoxidation of alkenes [12].…”
Section: Introductionmentioning
confidence: 99%
“…1a-c) though aggregates are smaller than observed from the hydrolysis of organotin(IV) trihalides e.g. ( i PrSn) 9 (O) 8 (OH) 6 Cl 5 , 57 ( i PrSn) 12 (O) 14 (OH) 6 Cl 2 . 58 (RSn) 8 (O) 14 (OH) 8 (SnOH) 4 (R = 2,4,6-i Pr 3 C 6 H 2 ).…”
Section: Sol-gel Precursorsmentioning
confidence: 95%