1995 Symposium on VLSI Technology. Digest of Technical Papers
DOI: 10.1109/vlsit.1995.520864
|View full text |Cite
|
Sign up to set email alerts
|

CVD SiN/sub X/ anti-reflective coating for sub-0.5 μm lithography

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Publication Types

Select...
2
1

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 3 publications
0
1
0
Order By: Relevance
“…Nitride-based ͑silicon nitride, silicon oxynitride͒ films have been demonstrated to have suitable optical characteristics for KrF and ArF lithography BARC applications. 4,5 Recently, hexamethyldisiloxane and carbon films have been shown to be suitable as BARC layers for F 2 lithography. 6,7 However, nitride-based BARC films are also preferred in F 2 lithography.…”
Section: Introductionmentioning
confidence: 99%
“…Nitride-based ͑silicon nitride, silicon oxynitride͒ films have been demonstrated to have suitable optical characteristics for KrF and ArF lithography BARC applications. 4,5 Recently, hexamethyldisiloxane and carbon films have been shown to be suitable as BARC layers for F 2 lithography. 6,7 However, nitride-based BARC films are also preferred in F 2 lithography.…”
Section: Introductionmentioning
confidence: 99%