The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD) was used for diamond nucleation and growth. Prior to diamond nucleation, the single crystal copper surface is modified by carbon ion implantation at an elevated temperature (~820 °C). This procedure leads to the formation of a graphite film on the copper surface, resulting in an enhancement of diamond crystallite nucleation. A simple lattice model has been constructed to describe the mechanism of diamond nucleation on graphite as (lll)diamond parallel to (0001) grap hite and (110) d iamond parallel to (1120) gra phite-This leads to a good understanding of diamond growth on carbon-implanted copper surfaces.

Office of Naval Research Grant # N0001 L89J1848 8c. ADDRESS (City, State, and ZIP Code) 10 SOURCE OF FUNDING NuMBERS

No abstract

No abstract

We report for the first time that diamond composite films consisting of diamond particles, hydrogenated amorphous carbon, and/or fluorocarbon films can be successfully deposited on carbon steel and 304 stainless-steel substrates by plasma-assisted chemical vapor deposition. The use of thin (∼200 Å) silicon buffer layer proves to be effective in inhibiting surface catalytic effect of iron and also prevents carbon species from diffusing into the bulk. The composite films adhere well to the substrates even upon imposing a scratch load of 68 newtons. They can also be bent up to 10° and still remain chemically inert and impermeable to salt solution. One of the potential applications of these films is for protective coating on sheet metal surfaces.