Cyclic, cryogenic, highly anisotropic plasma etching of silicon using SF6∕O2

Isakovic, A. F.; Evans‐Lutterodt, K.; Elliott, D.G.; Stein, Aaron; Warren, J. B.

doi:10.1116/1.2960557

Cited by 25 publications

(16 citation statements)

References 9 publications

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“…High anisotropy for nanometric channels (<100 nm) could be achieved by more complex processes, such as Bosch and cryogenic deep RIE methods for silicon. 7 …”

Section: Az1518 Versus Su-8mentioning

confidence: 99%

“…4 These lithography techniques demand a mold quality measured by the sidewall angle, etched depth and surface roughness. [5][6][7] Here, nanoimprint lithography resists-AZ1518 and SU-8 2002-and molds-silicon and polydimethylsiloxane (PDMS)-were investigated in the frame of polymeric circuits. The patterning procedure was demonstrated for poly(3-hexylthiophene) (P3HT) transistors, as this is a well-known polymeric semiconductor with several reports in the literature, being already applicable for gas sensing.…”

Section: Introductionmentioning

confidence: 99%

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Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

Cavallari

Zanchin

Pojar

et al. 2014

Journal of Elec Materi

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A low-cost patterning of electrodes was investigated looking forward to replacing conventional photolithography for the processing of low-operating voltage polymeric thin-film transistors. Hard silicon, etched by sulfur hexafluoride and oxygen gas mixture, and flexible polydimethylsiloxane imprinting molds were studied through atomic force microscopy (AFM) and field emission gun scanning electron microscopy. The higher the concentration of oxygen in reactive ion etching, the lower the etch rate, sidewall angle, and surface roughness. A concentration around 30 % at 100 mTorr, 65 W and 70 sccm was demonstrated as adequate for submicrometric channels, presenting a reduced etch rate of 176 nm/min. Imprinting with positive photoresist AZ1518 was compared to negative SU-8 2002 by optical microscopy and AFM. Conformal results were obtained only with the last resist by hot embossing at 120°C and 1 kgf/cm 2 for 2 min, followed by a 10 min post-baking at 100°C. The patterning procedure was applied to define gold source and drain electrodes on oxide-covered substrates to produce bottom-gate bottom-contact transistors. Poly(3-hexylthiophene) (P3HT) devices were processed on high-j titanium oxynitride (TiO x N y ) deposited by radiofrequency magnetron sputtering over indium tin oxide-covered glass to achieve low-voltage operation. Hole mobility on micrometric imprinted channels may approach amorphous silicon ($0.01 cm 2 /V s) and, since these devices operated at less than 5 V, they are not only suitable for electronic applications but also as sensors in aqueous media.

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“…High anisotropy for nanometric channels (<100 nm) could be achieved by more complex processes, such as Bosch and cryogenic deep RIE methods for silicon. 7 …”

Section: Az1518 Versus Su-8mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

Cavallari

Zanchin

Pojar

et al. 2014

Journal of Elec Materi

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“…It should be noted, that it has been demonstrated, that the passivation can also be created by the injection of SiF 4 and O 2 [25]. Chopping-mode etches for high aspect ratios using SF 6 and O 2 have also been demonstrated [26]. Since cryogenic etching is basically a reactive ion etching (RIE) process, it suffers from the same high aspect ratio effects.…”

Section: Cryogenic Etchingmentioning

confidence: 99%

Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers

Hofmann¹

2018

NANO

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High performance single nanometer lithography is an enabling technology for beyond CMOS devices. In this terms a novel mask-and development-less patterning scheme by using electric field, current controlled Scanning Probe Lithography (FE-SPL) in order to pattern structures on different samples was developed. This work aims to manufacture nanostructures into different resist by using FE-SPL, whereas plasma etching at cryogenic temperatures is applied for an efficient pattern transfer into the bottom Si substrate. The challenge for future quantum devices, generated by SPL and cryogenic etching, is finding a resist that is at most 10 nm in thickness and has a plasma durability high enough for pattern transfer into silicon. As a first step towards future quantum devices the silicon-to-resist selectivity of calixarene, AZ Barli, poly (3-hexylthiophen-2, 5-diyl) and polymethylmethacrylat for the anisotropic cryogenic dry etching process was estimated. A silicon-to-resist selectivity of about 4:1 for each of these resists was found. With these results, nano-scale, highly parallel double line features in silicon for future double patterning were generated.

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“…Variations of cRIE include e.g. a chopping-mode using SF6 and O2 for even higher aspect ratios and a generation of passivation layer by the injection of SiF4 and O2 to the gas chamber 38,39 . Basically, reactive ion etching at cryogenic temperature suffers from the same effects, when it comes to high aspect ratio etching (aspect ratios >3:1).…”

Section: Rie -Fagmentioning

confidence: 99%

Field-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions

Rangelow

Lenk

Hofmann

et al. 2018

Novel Patterning Technologies 2018

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Cost-effective generation of single-digit nano-lithographic features could be the way by which novel nanoelectronic devices, as single electron transistors combined with sophisticated CMOS integrated circuits, can be obtained. The capabilities of Field-Emission Scanning Probe Lithography (FE-SPL) and reactive ion etching (RIE) at cryogenic temperature open up a route to overcome the fundamental size limitations in nanofabrication. FE-SPL employs Fowler-Nordheim electron emission from the tip of a scanning probe in ambient conditions. The energy of the emitted electrons (<100 eV) is close to the lithographically relevant chemical excitations of the resist, thus strongly reducing proximity effects. The use of active, i.e. self-sensing and self-actuated, cantilevers as probes for FE-SPL leads to several promising performance benefits. These

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Cyclic, cryogenic, highly anisotropic plasma etching of silicon using SF6∕O2

Cited by 25 publications

References 9 publications

Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers

Field-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions

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