Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers

Abstract

High performance single nanometer lithography is an enabling technology for beyond CMOS devices. In this terms a novel mask-and development-less patterning scheme by using electric field, current controlled Scanning Probe Lithography (FE-SPL) in order to pattern structures on different samples was developed. This work aims to manufacture nanostructures into different resist by using FE-SPL, whereas plasma etching at cryogenic temperatures is applied for an efficient pattern transfer into the bottom Si substrate. The challenge for future quantum devices, generated by SPL and cryogenic etching, is finding a resist that is at most 10 nm in thickness and has a plasma durability high enough for pattern transfer into silicon. As a first step towards future quantum devices the silicon-to-resist selectivity of calixarene, AZ Barli, poly (3-hexylthiophen-2, 5-diyl) and polymethylmethacrylat for the anisotropic cryogenic dry etching process was estimated. A silicon-to-resist selectivity of about 4:1 for each of these resists was found. With these results, nano-scale, highly parallel double line features in silicon for future double patterning were generated.

Tip- and Laser-based 3D Nanofabrication in Extended Macroscopic Working Areas

“…In this mode of operation, the distance between cantilever tip and sample is closed-loop controlled to create a constant current between the cantilever tip and the surface. As a result, the resist is exposed by the electron current, allowing for tip-based lithography [56].…”

“…Right: SEM image of double line features, structured with the described FESPL technique. A fully etched trench between the two parallel lines is observed and the line distance is 30 nm [56] Fig. 8 Top: Close-up view of the NFM-100 machine table and mounted tip-based AFM/FESPL system.…”

Formation of Anti-Etching Nanopatterns in Field-Emission Scanning Probe Lithography on Calixarene Films

“…For transferring patterns on the organic molecular resist film to silicon, a cryogenic plasma etching with SF 6 /O 2 gases is commonly used for deep anisotropic etching of silicon. , In this study, we fabricated patterns on a 10 nm thick calixarene film by SPL and successfully transferred them to a silicon substrate via cryogenic etching. Under different exposure doses of FE-SPL, the pattern features display unexpected transformation after FE-SPL, wet development, and cryogenic etching.…”

Spinner with fan and Arduino for assembly of organic light emitting diodedevices

“…For the assembly of OLED devices, the concept of multilayers created by a technique called spin-coating have been used [8][9][10][11] . Spin-coating is widely used to create thin films, not only for OLED devices, but also for organic photovoltaic cell (OPV) devices [12][13][14][15] . This technique uses a commercial equipment known as spinner, which has basically controls of rotation speed, rotation time and vacuum (to hold the sample during the rotation process) [16][17][18] .…”