2011
DOI: 10.1088/1742-6596/334/1/012056
|View full text |Cite
|
Sign up to set email alerts
|

Cyclotron resonance in InMnAs and InMnSb ferromagnetic films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2013
2013
2024
2024

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(2 citation statements)
references
References 10 publications
0
2
0
Order By: Relevance
“…Cyclotron resonance measurements on ferromagnetic (In,Mn)Sb and (In,Mn)As (x = 0.02) in high magnetic field (B > 100 T) was explained by Landau level positions calculated from the eight-band kp model for InSb and InAs, respectively, indicating that the itinerant holes reside in the valence band of the host semiconductor (Matsuda et al, 2011).…”
Section: Hole Effective Mass In Iii-v Dmssmentioning
confidence: 99%
“…Cyclotron resonance measurements on ferromagnetic (In,Mn)Sb and (In,Mn)As (x = 0.02) in high magnetic field (B > 100 T) was explained by Landau level positions calculated from the eight-band kp model for InSb and InAs, respectively, indicating that the itinerant holes reside in the valence band of the host semiconductor (Matsuda et al, 2011).…”
Section: Hole Effective Mass In Iii-v Dmssmentioning
confidence: 99%
“…Several groups have reported that the optical conductivity in GaMnAs shows non-Drude-type behavior [13][14][15][16] while InMnAs and InMnSb both clearly show Drude-type conductivity. [17][18][19][20] In addition, a scanning tunneling microscopy study revealed the d-wave envelope function in the acceptor state in GaMnAs. 16 These facts indicate that holes in InMnAs and InMnSb could have different characteristics than holes in GaMnAs.…”
Section: Introductionmentioning
confidence: 99%