Spatially separated indirect photoemission in a non‐doped ZnSe/BeTe type II quantum structure is investigated by applying pulse magnetic field up to 50 T. The magnetic field dependences of the dichroic photoluminescence (PL) are well explained by an optical transition model associated with a positively charged exciton composed by an electron and two light holes. The PL is suppressed by magnetic field and also by temperature. Weak PL probably arising from localized excitons at interfaces is observed up to the highest magnetic field, and in high temperatures above 20 K. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

We report on the effect of electron injection on the magneto-optical properties of MgZnO/ZnO͑5 nm͒/ MgZnO single quantum wells ͑SQWs͒ by embedding a Ga delta-doped layer in one of the MgZnO barriers. Approaching the delta-doped layer to the SQW resulted in a photoluminescence ͑PL͒ blueshift due to the screening of internal polarization field by the injected electrons. Circular polarization in PL was enhanced by a magnetic field up to 50 T with a Faraday configuration. The observed Zeeman splitting and the degree of circular polarization in the magnetic field revealed that the PL originates from the negatively charged excitons X − .

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The high-resolution spin-flip Raman-scattering experiments were carried out on high-quality CdTe quantum wells below 0.5 K in high magnetic fields up to 14 T. An obvious exciton spin-flip Raman-scattering signal was observed in each quantum well under the Voigt configuration. The exciton exchange splitting in each quantum well was precisely determined.

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