Cyclotron Resonance of Electrons and Holes in Silicon and Germanium Crystals

Dresselhaus, G.; Kip, A. F.; Kittel, C.

doi:10.1103/physrev.98.368

Cited by 1,240 publications

(301 citation statements)

References 31 publications

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“…6 where we plot the interband dipole moment 11 between the conduction-band and the valence-band ground states for the four different models as a function of h. In the models with strain we have a maximum around h = 5 nm while the dipole moments for the two models without strain grow monotonically with increasing height and eventually reach a plateau value corresponding to the bulk value of 16.8 Åe. The monotonic increase in the dipole moments can be understood based on Eq.…”

Section: Results: Band Structure and Dipole Momentsmentioning

confidence: 99%

“…The dipole 46 is always the smaller of the two probe transitions and the fact that it drops off faster suggests that one should aim at using 11 , ground state to ground state, as probe transition.…”

Section: B Size/geometry Dependencementioning

confidence: 99%

“…These significant differences between the spectra justifies focusing on the results of the more exact eight-band strained band-structure model. V and ⌳ schemes can be realized using 41 as coupling transition and either of the two transitions 11 or 46 for the probe field. Two similar schemes can be accessed using the same probe transitions and 16 for the coupling field.…”

Section: B Size/geometry Dependencementioning

confidence: 99%

“…In this paper, we use k ជ · p ជ theory 10,11 to determine the band structure of conical quantum dots. A first popular k ជ · p ជ multiband calculation scheme for bulk materials is due to Luttinger and Kohn 12,13 which later on was extended to heterostructures by an ad hoc symmetrization procedure.…”

Section: Introductionmentioning

confidence: 99%

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Optical properties and optimization of electromagnetically induced transparency in strained InAs/GaAs quantum dot structures

et al. 2009

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Section: Results: Band Structure and Dipole Momentsmentioning

confidence: 99%

Section: B Size/geometry Dependencementioning

confidence: 99%

Section: B Size/geometry Dependencementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optical properties and optimization of electromagnetically induced transparency in strained InAs/GaAs quantum dot structures

et al. 2009

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“…This assumption, however, is valid only for high concentration of oxygen vacancies. By analyzing the transport properties, assuming a six-fold degenerate conduction band and r ¼ 2 (scattering by impurity ions), Okuda et al 24 Conventionally, m* of semiconductors have been determined by the Shubnikov-de Hass effect, 25 optical methods, 26 photoemission spectroscopy, 27 and cyclotron resonance techniques, 28 or by solving the Boltzmann transport equation using a four coefficients method. 29 Alternatively, m* may also be determined using spectroscopic ellipsometry (SE).…”

mentioning

confidence: 99%

Effect of oxygen vacancy distribution on the thermoelectric properties of La-doped SrTiO3 epitaxial thin films

Kumar

Abutaha

Hedhili

et al. 2012

Journal of Applied Physics

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A detailed study of the role of oxygen vacancies in determining the effective mass and high temperature (300–1000 K) thermoelectric properties of La-doped epitaxial SrTiO3 thin films is presented. It is observed that at intermediate temperatures, a transition from degenerate to non-degenerate behavior is observed in the Seebeck coefficient, but not electrical conductivity, which is attributed to heterogeneous oxygen non-stoichiometry. Heikes formula is found to be invalid for the films with oxygen vacancies. By fitting the spectroscopic ellipsometry (SE) data, obtained in the range 300–2100 nm, using a Drude-Lorentz dispersion relation with two Lorentz oscillators, the electrical and optical properties of the films are extracted. Using the excellent agreement between the transport properties extracted from SE modeling and direct electrical measurements, we demonstrate that an increase in concentration of oxygen vacancies results in a simultaneous increase of both carrier concentration and electron effective mass, resulting in a higher power factor.

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Cyclotron Resonance

Kono¹

2002

Characterization of Materials

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Cyclotron resonance (CR) is a method for measuring the effective masses of charge carriers in solids. It is by far the most direct and accurate method for providing such information. In the simplest description, the principle of the method can be stated as follows. A particle of effective mass and charge in a DC magnetic field executes a helical motion around with the cyclotron frequency . If, at the same time, an AC electric field of frequency is applied to the system, perpendicular to , the particle will resonantly absorb energy from the AC field. Since and/or ω can be continuously swept through the resonance and known to a very high degree of accuracy, can be directly determined with high accuracy by . As a secondary purpose, one can also use CR to study carrier scattering phenomena in solids by examining the scattering lifetime τ (the time between collisions, also known as the collision time or the transport/momentum relaxation time), which can be found from the linewidth of CR peaks. Although this article is mainly concerned with the simplest case of free carrier CR in bulk semiconductors, one can also study a wide variety of FIR magneto‐optical phenomena with essentially the same techniques as CR. These phenomena (“derivatives” of CR) include: (a) spin‐flip resonances, (b) resonances of bound carriers, (c) polaronic coupling, and (d) 1‐D and 2‐D magneto‐plasmon excitations. It is important to note that all the early CR studies were carried out on semiconductors, not on metals. Many techniques can provide information on effective masses, but none can rival CR for directness and accuracy. Effective masses can be estimated from the temperature dependence of the amplitude of the galvanomagnetic effects. The basic theory and experimental methods of cyclotron resonance are presented in this article. Basic theoretical background is presented. A detailed description is given of the actual experimentation procedures. Finally, typical data analysis procedures are presented.

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Cyclotron Resonance of Electrons and Holes in Silicon and Germanium Crystals

Cited by 1,240 publications

References 31 publications

Optical properties and optimization of electromagnetically induced transparency in strained InAs/GaAs quantum dot structures

Optical properties and optimization of electromagnetically induced transparency in strained InAs/GaAs quantum dot structures

Effect of oxygen vacancy distribution on the thermoelectric properties of La-doped SrTiO3 epitaxial thin films

Cyclotron Resonance

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