Cyclotron resonance of high-mobility GaAs/AlGaAs (311) 2DHGs

Hawksworth, Stuart; Hill, Stephen; Janssen, T. J. B. M.; Chamberlain, J.M.; Singleton, John; Ekenberg, U.; Summers, G.M.; Davies, A. G.; Nicholas, R.J.; Valadares, E.C.; Henini, M.; Perenboom, J.A.A.J.

doi:10.1088/0268-1242/8/7/043

Cited by 21 publications

(17 citation statements)

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“…[4][5][6][7][8][9][10][11] In contrast, in narrow quantum wells ͑QW͒ the intersubband separation may be increased, leaving the Fermi energy in a region of the first subband where the light effective mass of the zone center is maintained. [12][13][14] This ability to tune the effective mass by the choice of Fermi level is particularly felicitous for potential device applications.…”

Section: ϫ2mentioning

confidence: 99%

“…5,15 This progress has stimulated the investigation of Wigner crystallization 16 and the fractional quantum Hall effect 17 in heterojunctions containing 2DHS. The subband dispersion in zero magnetic field ͑normal to the plane͒ has been probed in a qualitative fashion using magnetotunneling spectroscopy and found to be satisfactorily modeled by existing calculations, even for the high-index oriented samples.…”

Section: ϫ2mentioning

confidence: 99%

“…The subband dispersion in zero magnetic field ͑normal to the plane͒ has been probed in a qualitative fashion using magnetotunneling spectroscopy and found to be satisfactorily modeled by existing calculations, even for the high-index oriented samples. 18 The Landau-level structure of 2DHS has been studied using the proven technique of cyclotron resonance ͑CR͒ in a number of previous works, [4][5][6][7][8][9][10][11]19,20 most of which concentrate on the single heterojunction samples where the highest mobilities are usually achieved. The various notable features of the CR spectra observed include a strongly fieldand p s -dependent CR mass and in some cases the observation of multiple CR transitions, usually in samples of lower mobility and higher carrier density.…”

Section: ϫ2mentioning

confidence: 99%

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Cyclotron resonance in ultra-low-hole-density narrow p-type GaAs/(Al,Ga)As quantum wells

et al. 1997

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The cyclotron-resonance behavior of a series of p-type, low p s , asymmetrically doped ͑311͒A quantum wells has been measured over two orders of magnitude in energy. Landau levels for the structures studied have been calculated for comparison with experiment. The calculations use a rotated Luttinger Hamiltonian and invoke the axial approximation. In the quantum limit and at certain far-infrared energies we observe two resonances widely separated in field. We find at the lowest fields that the samples exhibit a light effective mass. For the narrowest quantum well the cyclotron resonance ͑CR͒ broadens and shifts to a slightly lighter mass into the quantum limit, above about 2 T. The CR energy is modeled by inter-Landau-level transitions from the highest level, and a discontinuous evolution to a higher effective mass, observed as the second resonance above 8 T, is explained by crossing of the highest two Landau levels, as modeled in the calculation. The discontinuous evolution to a higher mass is found to shift to lower fields as the well width increases, as suggested from the modeling. For the wider quantum wells the influence of additional anticrossings at intermediate fields, due to the proximity of the second subband, is observed. CR energy for these samples is adequately modeled at energies above and below the region of subband anticrossing. The limitations of the modeling procedure have been discussed and a number of features of the experimental data are explained qualitatively in terms of the expected modifications to the hole Landau-level structure when full Landau-level mixing is incorporated into the modeling. The influence of hole-hole interactions and factors influencing the CR scattering time are also discussed briefly. ͓S0163-1829͑97͒08804-8͔

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Section: ϫ2mentioning

confidence: 99%

Section: ϫ2mentioning

confidence: 99%

Section: ϫ2mentioning

confidence: 99%

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Cyclotron resonance in ultra-low-hole-density narrow p-type GaAs/(Al,Ga)As quantum wells

et al. 1997

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“…Recently very high quality p-type GaAs/AIGaAs heterostructure and iquantum wells with mobilities in excess of 106cm2V -1 s -1 have been produced [7,8]. In such low disordgr samples one expects to see similar behaviour to that observed for electrons except that the r~ ~alues will be about six times higher because of the high effective mass [9]. As indicated in Fig.…”

mentioning

confidence: 73%

“…As the density is lowered the rs value at any given fraction only increases slowly since the cyclotron mass, which gives the Landau level separation and thus the Landau level mixing, falls with decreasing field [9]. However for densities of 5 x 10*°cm -2 r s is ~ 13 and one observes an activated insulating state, for ~ > v > 13 as well as for v < 13 while the FQHE state occurs at v = ½ I-5].…”

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confidence: 99%

Studies of the extreme quantum limit of 2D hole systems

Gallagher

Rodgers

Langerak

et al. 1995

Physica B: Condensed Matter

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We present electrical transport and photoluminecence results for high mobility p-type GaAs/(AIGa)As systems. We observe transitions into an insulating state characterized by an activation energy and a threshold electrical field at a (density-dependent) Landau level filling factor. A new line also appears in the photoluminescence spectr~ at filling factors close to those at which the insulating state occurs. All our observations are similar to those in high mobility 2D electron systems but a larger filling factors as would be expected for a Wigner solid stabilised by the larger Landau level mixing.

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