Czochralski grown Ga2O3 crystals

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

“…[122] At this point in time, Ga 2 O 3 wafers can be fabricated in large volumes and at reasonable cost-with even lower costs possible should demand materialize. These wafers are fabricated from bulk single crystals synthesized by a variety of melt-growth techniques such as float-zone, [120,123] Czochralski, [124,125] vertical Bridgman, [126] and edge-defined film-fed growth (EFG) methods. [127][128][129] To date, EFG has an advantage over the other melt-growth methods in producing such wafers.…”

Wet Thermal Oxidation of GaAs and GaN

“…The thermal stability of -Ga 2 O 3 reaches nearly melting point reported as 1740 C (Orita et al, 2004) and 1807 C (Tomm et al, 2000) or 2000 K (V´llora et al, 2004) what determines also possibility of working at high temperature. -Ga 2 O 3 in monoclinic structure has a elemental unit dimensions as follows: a=12.214 Å, b=3.0371 Å, c=5.7981 Å and =103.83 (Tomm et al, 2000) or a=12.23 Å, b=3.04 Å, c=5.8 Å and =103.7 (V´llora et al, 2004). Cleavage along (100) plane (Tomm et al, 2000;V´llora et al, 2004) and (001) (V´llora et al, 2004) are highly preferred.…”

“…-Ga 2 O 3 in monoclinic structure has a elemental unit dimensions as follows: a=12.214 Å, b=3.0371 Å, c=5.7981 Å and =103.83 (Tomm et al, 2000) or a=12.23 Å, b=3.04 Å, c=5.8 Å and =103.7 (V´llora et al, 2004). Cleavage along (100) plane (Tomm et al, 2000;V´llora et al, 2004) and (001) (V´llora et al, 2004) are highly preferred. The space group of -Ga 2 O 3 is C2/m (C 3 2h ) where GaO 6 share octahedral sites along b and are connected by GaO 4 tertrahedra thus anisotropy of optical as well as electrical properties is expected depending on the direction to the chains -perpendicular or parallel (Ueda b et al, 1997).…”

“…Dry or wet thermal oxidation are also applied. Since several years bulk crystals of Ga 2 O 3 are available (Tomm et al, 2000;V´llora et al, 2004) as well. Thermal oxidation of AIIIBV and AIIIN compounds -dry (Wilmsen, 1985;Lin et al, 2000) or wet (Readinger et al, 1999) -is unfortunately not similar to silicon oxidation.…”

Growth of oxide compounds under dynamic atmosphere composition

“…Gallium(III) oxide: Tomm et al [14] reported the first successful Czochralski growth of β-Ga 2 O 3 . The melting point T f = 1795 • C [4] is well beyond the stability limit of platinum, and hence Ir crucibles had to be used.…”