Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study

Harmatha, L.; Ťapajna, M.; Slugeň, V.; Ballo, P.; Pisecny, P.; Šik, J.; Kögel, G.

doi:10.1016/j.mejo.2005.04.059

Cited by 5 publications

(1 citation statement)

References 17 publications

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“…Many important advances have been achieved in laboratories across the world; for purely practical reasons, however, most of the examples used in this review are taken from work performed in the author's laboratory. Single-detector Doppler broadening spectroscopy, which has yielded much information on vacancy evolution, has been augmented by later developments such as the use of parameter-parameter maps [2], coincidence spectroscopy [3], enhanced-resolution profiling [4][5][6][7], full-spectrum fitting [8] and lifetime measurement (VEPALS) [9].…”

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confidence: 99%

Defect profiles in semiconductor structures

Coleman

2007

Phys. Status Solidi (c)

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Variable-energy positron annihilation spectroscopy (VEPAS) has found applications in structural and electronic analysis of thin films and near-surface layers, nanoporous materials, ion implantation, silicon photonics, and vacancy engineering. In all this applied work it is essential that VEPAS is treated as a normal member of the arsenal of spectroscopies available to the semiconductor research community. Examples are presented of how useful insights into current problems in semiconductor physics and technology have been gained by combinations of VEPAS and other techniques such as secondary ion mass spectrometry, transmission electron microscopy, electrical characterization, and optical techniques such as photoluminescence and optically-detected magnetic resonance.

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