2011
DOI: 10.4028/www.scientific.net/amr.222.8
|View full text |Cite
|
Sign up to set email alerts
|

CZTS Monograin Powders and Thin Films

Abstract: This paper reviews results of studies on different materials and technologies for polycrystalline solar cells conducted at Tallinn University of Technology. Structural properties and defect structure of kesterite CZTS compounds (Cu2ZnSnSe4, Cu2ZnSn(SSe)4) were studied. Influence of selenization parameters of a Zn-Cu-Sn stacked layer on the CZTS layer growth and on the morphology, distribution of elements was analyzed. All the results obtained have been used to optimize the technology of producing solar cell st… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
6
0

Year Published

2012
2012
2020
2020

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 13 publications
(6 citation statements)
references
References 20 publications
0
6
0
Order By: Relevance
“…-it is a compound whose intrinsic point defects lead to p-type semiconductor behavior; -it has a direct bandgap and an absorption coefficient >10 4 cm −1 , which is suitable for thin film photovoltaics applications [15][16][17]; -its band gap has been predicted [18] to be 1.0 eV for Cu 2 ZnSnSe 4 and 1.5 eV for Cu 2 ZnSnS 4 and evidences of the bandgap tunability have been found via the variations of V OC [19], as well as direct measurements of the variation of the bandgap between 1.0 eV for Cu 2 ZnSnSe 4 and 1.5 eV for Cu 2 ZnSnS 4 [20][21][22][23][24]. The band gap of CZTS can also be tuned by incorporation of Ge, Ge-containing materials having smaller bandgap than their Ge-free counterparts [25].…”
Section: Advantages Of Cztsmentioning
confidence: 99%
“…-it is a compound whose intrinsic point defects lead to p-type semiconductor behavior; -it has a direct bandgap and an absorption coefficient >10 4 cm −1 , which is suitable for thin film photovoltaics applications [15][16][17]; -its band gap has been predicted [18] to be 1.0 eV for Cu 2 ZnSnSe 4 and 1.5 eV for Cu 2 ZnSnS 4 and evidences of the bandgap tunability have been found via the variations of V OC [19], as well as direct measurements of the variation of the bandgap between 1.0 eV for Cu 2 ZnSnSe 4 and 1.5 eV for Cu 2 ZnSnS 4 [20][21][22][23][24]. The band gap of CZTS can also be tuned by incorporation of Ge, Ge-containing materials having smaller bandgap than their Ge-free counterparts [25].…”
Section: Advantages Of Cztsmentioning
confidence: 99%
“…Our results on XRD and the Raman measurements at different annealing temperatures confirm the formation of CZTS and CZTSe. From a comparison of our Raman spectra and the one of CZTSSe, prepared with different sulfur to selenium ratios [12], we conclude that CZTSSe is more likely present in our layers. There are several reactions which lead to the formation of CZTSSe.…”
Section: Discussionmentioning
confidence: 74%
“…CZTSSe monograins are synthesized from copper, zinc sulfide, zinc selenide, tin, and sulfur precursors in potassium iodine (KI) as flux material as described in detail in previous papers . After the synthesis of the CZTSSe monocrystals a washing procedure with water removes the KI, after which the powder is dried and sieved to obtain powders of desired grain sizes.…”
Section: Methodsmentioning
confidence: 99%
“…CZTSSe monograins are synthesized from copper, zinc sulfide, zinc selenide, tin, and sulfur precursors in potassium iodine (KI) as flux material as described in detail in previous papers. 2,6 After the synthesis of the CZTSSe monocrystals a washing procedure with water removes the KI, after which the powder is dried and sieved to obtain powders of desired grain sizes. This is followed by a heat treatment step at 740°C and the deposition of cadmium sulfide (CdS) by chemical bath deposition employing cadmium acetate as cadmium source and thiourea as sulfur source in an ammonia solution.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation