CZTSe-Based Solar Cell Performance Improvement Using the CSLO Technique

Abstract

Here we investigated a novel layer-based optimization technique to improve the performance of a CZTSe solar cell. By using this technique, the optical behavior and electrical properties of the proposed solar cell improved significantly as a result of the changes in the layer specifications and the layer materials. The structure of the cell consisted of an absorber laid on a conducting layer and covered by Indium Tin Oxide (ITO), with ZnO on its top surface. Due to the employment of the CSLO technique, a p+pn junction was formed between the absorber and window layers, which provided a lower recombination rate by transmitting more electrons and holes to the contacts. In addition, the main important parameters affecting the solar cell’s performance such as layer thickness, carrier lifetime, and total effect density were investigated. According to the results, the proposed CZTSe solar cell achieved a 32.6% and 79.5% efficiency and fill factor, respectively—which in comparison to a conventional solar cell is remarkable. Moreover, hybrid structures made by utilizing CZTS-based, Ge-based Cu2ZnGeSe4, and Si-based Cu2ZnSiSe4 with the proposed CZTSe-based solar cell were implemented and better results were achieved, yielding an efficiency of about 42, 50, and 34% and a fill factor of 66, 55, and 42%, respectively, due to the materials’ properties.

Understanding the Effects of Post-Deposition Sequential Annealing on the Physical and Chemical Properties of Cu2ZnSnSe4 Thin Films

“…Being part of a group of earth-abundant and non-toxic materials, chalcogenides also exhibit a high versatility in further solar cell-based preparation techniques [1]. Cu 2 ZnSn(S,Se) 4 (CZTS, CZTSe, CZTSSe) displays remarkable optoelectronic properties such as a tunable bandgap [2] and a high absorption coefficient [3]. As a p-type semiconductor with a direct optical bandgap ranging between 0.9 eV and 1.1 eV and an absorption coefficient estimated to an order of 10 4 cm −1 [2,3], CZTSe films demonstrate optimal characteristics for possible TFSC implementations [4].…”

“…Cu 2 ZnSn(S,Se) 4 (CZTS, CZTSe, CZTSSe) displays remarkable optoelectronic properties such as a tunable bandgap [2] and a high absorption coefficient [3]. As a p-type semiconductor with a direct optical bandgap ranging between 0.9 eV and 1.1 eV and an absorption coefficient estimated to an order of 10 4 cm −1 [2,3], CZTSe films demonstrate optimal characteristics for possible TFSC implementations [4]. In the last years, it has also been probed for radiation hardness tests, thus making the list of promising space-operable materials [5].…”