D-band Phased-Array TX and RX Front Ends Utilizing Radio-on-Glass Technology

This paper presents a wideband vector modulator phase shifter measured at frequency bands reaching and ever surpassing the ft of the technology for 6G beamforming for extremely high data rate applications. The circuit is designed based on 130nm SiGe BiCMOS technology with ft / fmax of 300/500 GHz. The chip occupies a die area of 0.53×0.48 mm 2 and offers a total 360° of phase variation with a pad-to-pad gain of -10dB over its 270 -330 GHz operational ranges.

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“…Multistage cascade amplification has been utilized in [2], [3], and [6]. Therefore, the highest gain and dissipated DC power have been reported.…”

Section: Measurement Resultsmentioning

confidence: 99%

A 270 – 330 GHz Vector Modulator Phase Shifter in 130nm SiGe BiCMOS

Montaseri

Singh

Jokinen

et al. 2022

2021 16th European Microwave Integrated Circuits Conference (EuMIC)

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“…Alternative approaches such as copper-pillar or direct waveguide interface to the antenna structure would be more amenable to higher frequencies. Recently, the radio-onglass technology has showed very promising performance at D-band [104].…”

Section: Thz Antenna Designmentioning

confidence: 99%

Terahertz Integrated Circuits and Systems for High-Speed Wireless Communications: Challenges and Design Perspectives

Heydari

2021

IEEE Open J. Solid-State Circuits Soc.

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This paper presents challenges and design perspectives for terahertz (THz) integrated circuits and systems. THz means different things to different people. From International Telecommunication Union (ITU) perspective, THz radiation primarily means frequency range from 300 − 3000 GHz. However, recently, a more expansive definition of THz has emerged that covers frequencies from 100 GHz to 10 THz, which includes sub-THz (100 − 300 GHz), ITU-defined THz frequencies. This definition is now commonly used by communication theorists, and since this paper is intended for people with a wide variety of expertise in system and circuit design, we have adopted the latter definition. The paper brings to the open unmitigated shortcomings of conventional transceiver architectures for multi gigabit-per-second wireless applications, unfolds challenges in designing THz transceivers, and provides pathways to address these impediments. Furthermore, it goes through design challenges and candidate solutions for key circuit blocks of a transceiver including front-end amplifiers, local oscillator (LO) circuit and LO distribution network, and antennas intended for frequencies above 100 GHz.

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“…These early works were still limited in terms of bandwidth to below 20 GHz but could already show saturated output powers as high as +10 dBm, albeit with a significantly lower output-referred compression point (P1dB) around 0 dBm. However, following encouraging examples in indium-phosphide technology [154], in recent years, the state-of-the-art has been pushed significantly with a number of works that target full coverage of the D-band from 110 to 170 GHz [149]- [151], [155]. Fig.…”

Section: D-band Communication Transceiversmentioning

confidence: 99%

“…Recently, the first step toward higher system integration has been undertaken. In [155], a TX and RX phased-array amplifier chipset for a radio-on-glass communication module has been presented. Both ICs feature a digitally controlled vector-added phase shifter and a low-noise amplifier and power amplifier, respectively.…”

Section: D-band Communication Transceiversmentioning

confidence: 99%

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Kissinger

Kahmen

Weigel

2021

IEEE Trans. Microwave Theory Techn.

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This invited paper reviews the progress of silicon-germanium (SiGe) bipolar-complementary metal-oxidesemiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.

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D-band Phased-Array TX and RX Front Ends Utilizing Radio-on-Glass Technology

Cited by 52 publications

References 8 publications

A 270 – 330 GHz Vector Modulator Phase Shifter in 130nm SiGe BiCMOS

A 270 – 330 GHz Vector Modulator Phase Shifter in 130nm SiGe BiCMOS

Terahertz Integrated Circuits and Systems for High-Speed Wireless Communications: Challenges and Design Perspectives

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

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