DAC-Less Amplifier-Less Generation and Transmission of QAM Signals Using Sub-Volt Silicon-Organic Hybrid Modulators

Wolf, S.; Lauermann, Matthias; Schindler, Philipp; Ronniger, Gregor; Geistert, Kristina; Palmer, R.; Köber, Sebastian; Bogaerts, Wim; Leuthold, Juerg; Freude, W.; Koos, C.

doi:10.1109/jlt.2015.2394511

Cited by 53 publications

(56 citation statements)

References 28 publications

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“…4 × 25 Gbit/s multiplexer and 6-tap FFE) corresponding to 7 pJ/bit. Previously we showed that SOH modulators can be operated with peak-to-peak voltages well below 1 V pp [41]. In a fully integrated package, the additional external drive amplifier can hence be omitted, and the total power consumption for the 100 Gbit/s transmittter will stay below 1 W. This is well compatible with the power ratings of highly compact SFP+ packages.…”

Section: Demonstration Of Three-level Intensity-modulated Duobinary (mentioning

confidence: 68%

Silicon-organic hybrid (SOH) modulators for intensity-modulation / direct-detection links with line rates of up to 120 Gbit/s

Zwickel¹,

Wolf²,

Kieninger³

et al. 2017

Opt. Express

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High-speed interconnects in data-center and campus-area networks crucially rely on efficient and technically simple transmission techniques that use intensity modulation and direct detection (IM/DD) to bridge distances of up to a few kilometers. This requires electrooptic modulators that combine low operation voltages with large modulation bandwidth and that can be operated at high symbol rates using integrated drive circuits. Here we explore the potential of silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) for generating high-speed IM/DD signals at line rates of up to 120 Gbit/s. Using a SiGe BiCMOS signalconditioning chip, we demonstrate that intensity-modulated duobinary (IDB) signaling allows to efficiently use the electrical bandwidth, thereby enabling line rates of up to 100 Gbit/s at bit error ratios (BER) of 8.5 × 10 −5 . This is the highest data rate achieved so far using a silicon-based MZM in combination with a dedicated signal-conditioning integrated circuit (IC). We further show four-level pulse-amplitude modulation (PAM4) at lines rates of up to 120 Gbit/s (BER = 3.2 × 10 −3 ) using a high-speed arbitrary-waveform generator and a 0.5 mm long MZM. This is the highest data rate hitherto achieved with a sub-millimeter MZM on the silicon photonic platform.

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Section: Demonstration Of Three-level Intensity-modulated Duobinary (mentioning

confidence: 68%

Silicon-organic hybrid (SOH) modulators for intensity-modulation / direct-detection links with line rates of up to 120 Gbit/s

Zwickel¹,

Wolf²,

Kieninger³

et al. 2017

Opt. Express

Self Cite

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show abstract

“…The resulting four-level signal has a peak-to-peak amplitude of 400 mVpp. and is sufficient to generate highquality 16QAM signals at a symbol rate of 10 GBd and an energy consumption of only 18 fJ/bit [24]. tion II.A [21].…”

Section: A the Poh Device Conceptmentioning

confidence: 99%

“…Moreover, SOH devices are perfectly suited for advanced modulation formats such as quadrature phase-shift keying (QPSK) and 16-state quadrature-amplitude modulation (16QAM) [22], [23]. The high modulation efficiency of SOH modulators allows to drive the devices directly from binary CMOS output ports of standard field-programmable gate arrays (FPGA) for generating advanced modulation formats without the use of digital-toanalog converters or radio-frequency (RF) drive amplifiers [24]. POH modulators stand out due to their high modulation speed and ultra-compact footprint, featuring voltagelength products down to U π L = 0.05 Vmm and typical lengths of a few tens of micrometers [25] - [28].…”

mentioning

confidence: 99%

Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) Integration

Koos

Leuthold

Freude

et al. 2015

Optical Fiber Communication Conference

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Abstract-Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon photonic platform, reducing device footprint by more than an order of magnitude. However, neither silicon nor metals exhibit appreciable second-order optical nonlinearities, thereby making efficient electro-optic modulators challenging to realize. These deficiencies can be overcome by the concepts of silicon-organic hybrid (SOH) and plasmonicorganic hybrid (POH) integration, which combine silicon-oninsulator (SOI) waveguides and plasmonic nanostructures with organic electro-optic cladding materials.Index Terms-Electro-optic modulators, photonic integrated circuits, silicon photonics, plasmonics, nonlinear optical devicesElectro-optic (EO) modulators are key building blocks for highly integrated photonic-electronic circuits on the silicon

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“…Symbol rates of up to 40 GBd and line rates of up 160 Gbit/s have been demonstrated experimentally [18]. The high efficiency of SOH devices even enables direct interfacing of IQ modulators to the binary outputs of an FPGA to generate 16QAM data streams without using preamplifiers or digital-to-analog converters [19]. However, while SOH modulators show great promise to further increase both symbol and data rates, the wider use of these devices is still hampered by doubts as to the temperature stability of the organic materials, in particular regarding the decay of acentric order in the poled material when operated at elevates temperatures.…”

Section: Introductionmentioning

confidence: 99%

Generation of 64 GBd 4ASK signals using a silicon-organic hybrid modulator at 80°C

et al. 2016

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Abstract:We demonstrate a silicon-organic hybrid (SOH) Mach-Zehnder modulator (MZM) generating four-level amplitude shift keying (4ASK) signals at symbol rates of up to 64 GBd both at room temperature and at an elevated temperature of 80 °C. The measured line rate of 128 Gbit/s corresponds to the highest value demonstrated for silicon-based MZM so far. We report bit error ratios of 10 −10 (64 GBd BPSK), 10 −5 (36 GBd 4ASK), and 4 × 10 −3 (64 GBd 4ASK) at room temperature. At 80 °C, the respective bit error ratios are 10 −10 , 10 −4 , and 1.3 × 10 −2 . The hightemperature experiments were performed in regular oxygen-rich ambient atmosphere. ©2016 Optical Society of America

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DAC-Less Amplifier-Less Generation and Transmission of QAM Signals Using Sub-Volt Silicon-Organic Hybrid Modulators

Cited by 53 publications

References 28 publications

Silicon-organic hybrid (SOH) modulators for intensity-modulation / direct-detection links with line rates of up to 120 Gbit/s

Silicon-organic hybrid (SOH) modulators for intensity-modulation / direct-detection links with line rates of up to 120 Gbit/s

Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) Integration

Generation of 64 GBd 4ASK signals using a silicon-organic hybrid modulator at 80°C

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