Damage accumulation in ceramics during ion implantation

McHargue, C.J.; Farlow, G. C.; Begun, G. M.; Williams, James M.; White, C.W.; Appleton, B. R.; Sklad, P.S.; Angelini, P.

doi:10.1016/0168-583x(86)90016-9

Cited by 60 publications

(10 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One can also see that the disorder in the oxygen sublattice is greater than in the aluminium sublattice for all examined samples. This was also observed by McHargue et al [25].…”

Section: Resultssupporting

confidence: 71%

Structural disorder in sapphire induced by 90.3MeV xenon ions

Kabir

Meftah

Stoquert³

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

“…One can also see that the disorder in the oxygen sublattice is greater than in the aluminium sublattice for all examined samples. This was also observed by McHargue et al [25].…”

Section: Resultssupporting

confidence: 71%

Structural disorder in sapphire induced by 90.3MeV xenon ions

Kabir

Meftah

Stoquert³

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

“…18,19,21,22 All future mention of "as-implanted" material will imply samples that have been subjected to this recovery anneal. 18,19,21,22 All future mention of "as-implanted" material will imply samples that have been subjected to this recovery anneal.…”

Section: (3) Thermal Annealingmentioning

confidence: 99%

“…All analyses were performed on a Cameca IMS/3F SIMS according to procedures developed by Paulson et al 28 A 300-nA 18 O negative ion primary beam, operating at 14.5 keV, was rastered over a 250 m ϫ 250 m area producing a crater roughly 425 m on a side. All analyses were performed on a Cameca IMS/3F SIMS according to procedures developed by Paulson et al 28 A 300-nA 18 O negative ion primary beam, operating at 14.5 keV, was rastered over a 250 m ϫ 250 m area producing a crater roughly 425 m on a side.…”

Section: (4) Secondary Ion Mass Spectrometry (Sims)mentioning

confidence: 99%

Solid Solubility and Precipitation in a Single‐Crystal Alumina–Zirconia System

Stough

Hellmann

2002

Journal of the American Ceramic Society

View full text Add to dashboard Cite

Solid solubility was examined in Zr‐doped sapphire and Al‐doped yttria‐stabilized zirconia (YSZ) single crystals from 1200° to 1600°C. Specimens were fabricated via ion implantation of single crystals, followed by annealing in air. Secondary ion mass spectroscopy (SIMS) was used to quantify solute redistribution during annealing. Comparison of SIMS results with analytical electron microscopy (AEM) revealed an alumina solubility of 0.2–0.3 wt% in zirconia, and a zirconia solubility of 0.004–0.027 wt% in alumina. Direct imaging of zirconia precipitates revealed that tetragonal zirconia precipitates from supersaturated sapphire with the following orientation relationship: (100)tetragonal‖ (0001)sapphire and [01¯1]tetragonal‖ [12¯10]sapphire.

show abstract

“…In fact, numerous examples exist where the experimental results on amorphization of a given ceramic do not agree with each other in terms of the amount of displacement damage that is required to produce amorphization [ 1- 51. It has been recognized for several years that implanted ions can have a significant effect on the dose required to a m o r p k damage resistant materials. For example, the dose required to amorphize A1203 at room temperature with low-energy Zr ions is about 50 displacements per atom (dpa), whereas amorphization does not occur during irradiation with ions such as Nb and Cr for doses in excess of 100 dpa [3,6,7]. Unfortunately, most of the available results on amorphization of ceramics were obtained using ions with energies <300 keV.…”

Section: Introductionmentioning

confidence: 97%

Influence of irradiation spectrum and implanted ions on the amorphization of ceramics

Zinkle

Snead

1996

Nuclear Instruments and Methods in Physics Research Section B:

190

View full text Add to dashboard Cite

Polycrystalline specimens of alumina (Al2O3), magnesium aluminate spinel (MgA1204), magnesia (MgO), silicon nitride (Si3N4) and silicon carbide (Sic) were irradiated with various ions at temperatures between 200 K and 450 K, and the microstructures were examined following irradiation using cross-section transmission electron microscopy. Amorphization was not observed in any of the irradiated oxide ceramics, despite damage energy densities up to -7 keV/atom (-70 displacements per atom). On the other hand, Sic readily amorphized after damage levels of -0.4 dpa at room temperature. Silicon nitride exhibited intemediate behavior; . irradiation with Fe* ions at room temperatm produced amorphization in the implanted ion region after damage levels of -1 dpa. However, irradiated regions outside of the implanted ion region did not amorphize even after damage levels in excess of 5 dpa. The amorphous layer in the Fe-implanted region of Si3N4 did not appear if the specimen was simultaneously irradiated with 1 MeV He+ ions at room temperature. By comparison with published results, it is concluded that the implantation of certain chemical species has a pronounced effect on the amorphizahon threshold dose of all five materials. Intense ionizing d a t i o n inhibits amorpkation in Si3N4, but does not appear to signtficantly influence the amorphimion behavior of Sic.

show abstract

Damage accumulation in ceramics during ion implantation

Cited by 60 publications

References 32 publications

Structural disorder in sapphire induced by 90.3MeV xenon ions

Structural disorder in sapphire induced by 90.3MeV xenon ions

Solid Solubility and Precipitation in a Single‐Crystal Alumina–Zirconia System

Influence of irradiation spectrum and implanted ions on the amorphization of ceramics

Contact Info

Product

Resources

About