2018
DOI: 10.1364/josab.35.002799
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Damage accumulation in thin ruthenium films induced by repetitive exposure to femtosecond XUV pulses below the single-shot ablation threshold

Abstract: The process of damage accumulation in thin ruthenium films exposed to multiple femtosecond XUV free electron laser (FEL) pulses below the critical angle of reflectance at the Free electron LASer facility in Hamburg (FLASH) was experimentally analyzed. The multishot damage threshold is found to be lower than single-shot damage threshold. Detailed analysis of the damage morphology and its dependence on irradiation conditions justifies the assumption that cavitation induced by the FEL pulse is the prime mechanism… Show more

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Cited by 7 publications
(1 citation statement)
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“…In our previous studies we focused on severe damage of Ru thin films in single- [14,15,16] and multi-shot regimes [17], as well as on a longterm exposure of Ru at fluences significantly below the single-shot ablation threshold [18]. Such sub-threshold investigation of material degradation is challenging since the processes involved are elusive to be detected postmortem.…”
Section: Introductionmentioning
confidence: 99%
“…In our previous studies we focused on severe damage of Ru thin films in single- [14,15,16] and multi-shot regimes [17], as well as on a longterm exposure of Ru at fluences significantly below the single-shot ablation threshold [18]. Such sub-threshold investigation of material degradation is challenging since the processes involved are elusive to be detected postmortem.…”
Section: Introductionmentioning
confidence: 99%