Damage and thermal annealing of dual-ions (Pt and S) implanted YSZ material

Abstract

A oriented cubic YSZ (yttria stabilized zirconia) single crystal implanted with 160 keV platinum ions and subsequently implanted with 40 keV sulphur ions has been investigated. The implantation was carried out at room temperature (RT). Annealing was performed isothermally in air ambient at and for 4 and 12 hours. Rutherford backscattering spectrometry and channelling (RBS-C) of 2 MeV He ions was used to study the depth distribution of lattice damage and impurity, as well as the recrystallization of the damaged layer. X-ray diffraction (XRD) is employed to examine the phase formation. For dual-implanted samples, XRD measurement showed, after annealing, formation of monoclinic phase polycrystalline in the damage region and Pt grains with randomly oriented cubic phase, which is consistent with RBS-C results. In addition, XRD measurement also revealed formation of hexagonal grains.

Ta–Pt Alloys as Gate Materials for Metal–Oxide–Semiconductor Field Effect Transistor Application

“…Considering the diffraction patterns of tantalum oxide and Pt, this peak is close to that of Pt(200), which is the second most intense phase in Pt powder. 28) Therefore, the peak at 45.56 in the II.…”