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A oriented cubic YSZ (yttria stabilized zirconia) single crystal implanted with 160 keV platinum ions and subsequently implanted with 40 keV sulphur ions has been investigated. The implantation was carried out at room temperature (RT). Annealing was performed isothermally in air ambient at and for 4 and 12 hours. Rutherford backscattering spectrometry and channelling (RBS-C) of 2 MeV He ions was used to study the depth distribution of lattice damage and impurity, as well as the recrystallization of the damaged layer. X-ray diffraction (XRD) is employed to examine the phase formation. For dual-implanted samples, XRD measurement showed, after annealing, formation of monoclinic phase polycrystalline in the damage region and Pt grains with randomly oriented cubic phase, which is consistent with RBS-C results. In addition, XRD measurement also revealed formation of hexagonal grains.

Following the implantation of arsenic into titanium disilicide films on p type silicon, Rutherford backscattering has shown that rapid thermal vacuum processing (RTVP) causes the arsenic to diffuse toward the silicide/silicon interface, with an accumulation at the interface and with a sharp shallow diffusion into the silicon.The effect of the implant and anneal on the sheet resistance of the silicide and underlying silicon have been investigated' and it is shown that anneal times of thirty seconds at 900 0 C produce acceptable shallow junctions suitable for device type applications without significant deterioration in silicide electrical or physical properties.