1994
DOI: 10.1016/0168-583x(94)96231-6
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Thermal annealing of single crystal zirconia implanted with platinum ions

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Cited by 8 publications
(3 citation statements)
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“…XRD measurement confirmed the formation of platinum crystallites (as shown in figure 2) during thermal annealing. These platinum precipitates have 200 preferred orientation, which is consistent with the results (as shown in figure 5) that the aligned Pt spectrum yield is much lower than that of the random spectrum, and with the results of angular scanning about the 100 axial channel of YSZ implanted with 158 keV platinum reported by D X Cao et al [15]. Roberts [9] reported that the Pt film vapour-deposited onto a YSZ(100) crystal formed particles after thermal treatment at above 350 K, and the Pt particles were oriented with the hexagonal (111) plane parallel to the ZrO 2 (100) surface, even after the formation of very large particles, by transmission electron diffraction (TED) measurement.…”
Section: Measurement (Shown Insupporting
confidence: 91%
“…XRD measurement confirmed the formation of platinum crystallites (as shown in figure 2) during thermal annealing. These platinum precipitates have 200 preferred orientation, which is consistent with the results (as shown in figure 5) that the aligned Pt spectrum yield is much lower than that of the random spectrum, and with the results of angular scanning about the 100 axial channel of YSZ implanted with 158 keV platinum reported by D X Cao et al [15]. Roberts [9] reported that the Pt film vapour-deposited onto a YSZ(100) crystal formed particles after thermal treatment at above 350 K, and the Pt particles were oriented with the hexagonal (111) plane parallel to the ZrO 2 (100) surface, even after the formation of very large particles, by transmission electron diffraction (TED) measurement.…”
Section: Measurement (Shown Insupporting
confidence: 91%
“…Generally, in the case of ion implantation in YSZ (with e.g. Yb [25], Pt [26] or Cs [27,28]), post-implantation annealing leads to damage recovery (starting from 400°C to 800°C for Pt or Cs implantation, respectively). But in the particular case of inert gases, and especially He, the situation is different, since an increase of the disorder level is measured.…”
Section: Discussionmentioning
confidence: 99%
“…The raw data collected by SIMS consists of the secondary ion yields of the following mass species, regardless of whether the host material was sapphire or cubic The emission and yield of 16 O, 18 O, and matrix species were monitored to ensure that (a) they were constant after the surface effects subside, and (b) their relative magnitudes were constant from analysis to analysis. If the material host was sapphire, 54 (Al 2 ϩ ) was monitored as the matrix signal and when cubic ZrO 2 was the host material, 27 Al was monitored as the profile description of aluminum distribution.…”
Section: (4) Secondary Ion Mass Spectrometry (Sims)mentioning
confidence: 99%