Damage in crystalline silicon by swift heavy ion irradiation

Osmani, O.; Alzaher, Ibrahim; Peters, Thorsten; d'Etat, Brigitte Ban; Cassimi, A.; Lebius, H.; Monnet, I.; Medvedev, Nikita; Rethfeld, Baerbel; Schleberger, Marika

doi:10.1016/j.nimb.2011.08.036

Cited by 24 publications

(10 citation statements)

References 26 publications

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“…This is lower than the threshold reported previously at 7.5 keV/nm [ 15 ], which might be affected by the velocity effect. For silicon we do not expect to observe surface ion tracks at 5 keV/nm since none were observed previously at a higher stopping power of 12 keV/nm [ 48 ].…”

Section: Resultsmentioning

confidence: 85%

Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam

et al. 2021

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Both silicon and graphite are radiation hard materials with respect to swift heavy ions like fission fragments and cosmic rays. Recrystallisation is considered to be the main mechanism of prompt damage anneal in these two materials, resulting in negligible amounts of damage produced, even when exposed to high ion fluences. In this work we present evidence that these two materials could be susceptible to swift heavy ion irradiation effects even at low energies. In the case of silicon, ion channeling and electron microscopy measurements reveal significant recovery of pre-existing defects when exposed to a swift heavy ion beam. In the case of graphite, by using ion channeling, Raman spectroscopy and atomic force microscopy, we found that the surface of the material is more prone to irradiation damage than the bulk.

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Section: Resultsmentioning

confidence: 85%

Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam

et al. 2021

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“…This TTM model has been mainly used for metals [6,15] or insulators [16,17]. It has also been used for semiconductors [18,19] but, to our knowledge, never with temperature dependent parameters. The temperature dependency has been estimated through the electronic specific heat C e in eV/(e -.K) as follow:…”

Section: A Molecular Dynamicsmentioning

confidence: 99%

Simulation of Single Particle Displacement Damage in Silicon–Part II: Generation and Long-Time Relaxation of Damage Structure

Jay

Raine

Richard

et al. 2017

IEEE Trans. Nucl. Sci.

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A statistical study of displacement cascades induced by silicon Primary Knock-on Atoms (PKA) in bulk silicon is performed by running a large number of molecular dynamics (MD) simulations. The choice of the PKA species and energy varying from 1 to 100 keV comes from a previous particle-matter simulation [1]. The electronic stopping power missing in standard MD simulations is here taken into account using the Two Temperature Model (TTM). This prevents from overestimating the number of created defects. The damaged atomic structures obtained after one nanosecond of MD simulation are not representative of what is observed in image sensors for example after several minutes. For this reason, the kinetic Activation Relaxation Technique (k-ART) is used in a second step, allowing to access longer simulation times of up to second. The obtained damaged structures can then be compared with experimental observations. Analysis reveals two possible links between the simulated structures and the measurements in solid-state image sensors. First, the cluster size distribution exhibits a shape similar to the measured exponential distribution of Dark Current (DC). Second, the temporal evolution of metastable atomic configurations resembles experimental DC-Random-Telegraph-Signals.

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“…The coupling parameter g is also temperature dependent as shown in [6], though often used as an adjustable constant to get agreement with experimental data [3]. There is an uncertainty of this parameter as can be seen by comparing its values for silicon: g = 1.8Á10 12 W/cm 3 /K obtained in [3] by fitting to experimental data, and g = 5Á10 12 W/cm 3 /K obtained in [7], where an attempt was made to use MC calculations in conjunction with TTM calculations. In fact, the latter value of g was also obtained by an adjustment procedure.…”

Section: Introductionmentioning

confidence: 90%

Electron–phonon interactions in silicon: Mean free paths, related distributions and transport characteristics

Akkerman¹,

Murat²

2015

Nuclear Instruments and Methods in Physics Research Section B:

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Damage in crystalline silicon by swift heavy ion irradiation

Cited by 24 publications

References 26 publications

Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam

Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam

Simulation of Single Particle Displacement Damage in Silicon–Part II: Generation and Long-Time Relaxation of Damage Structure

Electron–phonon interactions in silicon: Mean free paths, related distributions and transport characteristics

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