Damage structures of silicon irradiated heavily with neutrons

Substructures of Gas-Ion-Irradiation-Induced Surface Blisters in Silicon Studied by Cross-Sectional Transmission Electron Microscopy

“…One can estimate the orientational fluctuation of the fragmented domains from the spot broadening in It is seen that most of the small defects in (a) are interstitial faulted loops on the {311} planes, which are well known to be formed by energetic particle (electron, neutron, ion) irradiation at elevated temperatures, where self-interstitial atoms are mobile (> 400 K). [18][19][20][21][22] This result indicates that the {311}-loops can be formed even at room temperature in the presence of a very high density of hydrogen. The H concentration was estimated to be approximately 30 at% around the projected range peak in Fig.…”

Recovery of neutron-induced damage of Si analyzed by thermal expansion measurement

“…Oshima et al [15] reported the formation of vacancy-type clusters in the Si neutron-irradiated at 200°C up to 2.5 Â 10 23 n/m 2 . It is also reported that vacancy-type defect clusters were observed in 14 MeV neutron-irradiated Si at less than 350°C, and in the case of above 450°C, it was associated with oxygen impurity [16].…”

High-temperature neutron irradiation effects on CVD-diamond, silicon and silicon carbide

“…From Raman spectroscopy and X-ray diffraction, an amorphization of the crystal was clearly observed only in silicon as broad peaks at 17-27°by XRD and by Raman peaks at 480 cm À1 , which was assigned to an amorphous phase [28,29]. In silicon, an amorphous phase is formed as a result of neutron irradiation over a fluence of 10 25 n/ m 2 [29] besides vacancy clusters [30]. This result was supported by the molecular dynamic simulation by Diaz de la Rubia et al [31] induced by 3-5 keV displacement cascades in silicon carbide and silicon, where amorphization took place only in silicon, otherwise the disordered region retains the basic crystal structure in SiC.…”

“…Oshima et al [24] reported damage structure of neutroninduced defects in silicon by weak-beam TEM observation, and indicated these were vacancy type.…”