High-temperature neutron irradiation effects on CVD-diamond, silicon and silicon carbide

Yano, Toyohiko; Sawabe, Takashi; Yoshida, Katsumi; Yamamoto, Yoshiro

doi:10.1016/j.jnucmat.2008.12.203

Cited by 6 publications

(3 citation statements)

References 32 publications

(39 reference statements)

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“…The present experimental result indicates a conversion of carbon atoms from sp 3 into sp 2 hybridization states. Based on earlier publications, there exist two possible mechanisms which can result in the conversion: (1) particle (e.g., ion and neutron) bombardment-induced mechanism which was confirmed by theoretical studies [27][28][29] and experiments [22][23][24]30,31 to produce carbon clusters containing sp 2 CÀ ÀC pairs or chains and (2) nitrogen-promoted mechanism which was proposed in carbon nitride 32 and SiC 33 materials, where the nitrogen atoms can promote carbon atoms to form sp 2 C¼ ¼C bonds. The ion implantation into SiC showed no segregation of carbon atoms into graphite despite the presence of sp 2 hybridized C atoms which only give a band at around 1420 cm À1 .…”

Section: Resultsmentioning

confidence: 72%

Nitrogen-promoted formation of graphite-like aggregations in SiC during neutron irradiation

Wang

Ruan

Huang

et al. 2012

Journal of Applied Physics

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The undoped and nitrogen-doped SiC bulk crystals irradiated with two neutron fluences were investigated by using confocal micro-Raman spectroscopy to analyze the effect of nitrogen impurity on irradiation damage. We found that the nitrogen impurity can promote the segregation of carbon atoms into graphite during heavy neutron irradiation, demonstrated by the presence of typical D and G graphite bands. Further experimental analysis indicated that the graphite-like aggregations uniformly distribute in SiC and possess much inferior thermal stability to crystalline graphite. The nucleation, namely generation of stable sp2 CC configuration induced by nitrogen atoms, and growth during neutron irradiation can account for the formation of graphite-like aggregations.

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Section: Resultsmentioning

confidence: 72%

Nitrogen-promoted formation of graphite-like aggregations in SiC during neutron irradiation

Wang

Ruan

Huang

et al. 2012

Journal of Applied Physics

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“…Tese efects include the formation and accumulation of electron traps, dielectric breakdown, carrier trapping and injection, and the formation of crystal structure defects, among others. Tese efects not only lead to severe degradation of device performance but also impact the overall reliability of electronic systems, thereby limiting the application of electronic devices in felds such as nuclear energy and aerospace [3]. To mitigate these efects, researchers have made progress in developing protection techniques such as material improvement, structural optimization, and radiation resistance testing [4].…”

Section: Introductionmentioning

confidence: 99%

Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices

Ren,

Zhu,

et al. 2024

Science and Technology of Nuclear Installations

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With the rapid advancement of information technology, microelectronic devices have found widespread applications in critical sectors such as nuclear power plants, aerospace equipment, and satellites. However, these devices are frequently exposed to diverse radiation environments, presenting significant challenges in mitigating radiation-induced damage. Hence, this review aims to delve into the intricate damage mechanisms of microelectronic devices within various radiation environments and highlight the latest advancements in radiation-hardening techniques. The ultimate goal is to bolster the reliability and stability of these devices under extreme conditions. The review initiates by outlining the spectrum of radiation environments that microelectronic devices may confront, encompassing space radiation, nuclear explosion radiation, laboratory radiation, and process radiation. It also delineates the potential damage types that these environments can inflict upon microelectronic devices. Furthermore, the review elaborates on the underlying mechanisms through which different radiation environments impact the performance of microelectronic devices, which includes a detailed analysis of the characteristics and fundamental mechanisms of damage when microelectronic devices are subjected to total ionizing dose effects and single-event effects. In addition, the review delves into the promising application prospects of several key radiation-hardening techniques for enhancing the radiation tolerance of microelectronic devices.

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“…Therefore, it is a potential material used next to the interface of SiC f / SiC composite. The most common methods to prepare fibre coating are the polymer infiltration and pyrolysis (PIP) and the chemical vapour deposition (CVD) [23,24]. The CVD was chosen over the PIP for coating fabrication, because on one hand, the elimination of volatile and extraction of organic compound, which appear in the PIP process frequently, can be avoided during the CVD process.…”

Section: Introductionmentioning

confidence: 99%

Influence of SiC coating thickness on mechanical properties of SiCf/SiC composite

Zhou

Zhang

et al. 2013

Journal of Nuclear Materials

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High-temperature neutron irradiation effects on CVD-diamond, silicon and silicon carbide

Cited by 6 publications

References 32 publications

Nitrogen-promoted formation of graphite-like aggregations in SiC during neutron irradiation

Nitrogen-promoted formation of graphite-like aggregations in SiC during neutron irradiation

Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices

Influence of SiC coating thickness on mechanical properties of SiCf/SiC composite

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