Damage threshold of HgCdTe induced by continuous-wave CO2 laser

Zhao, Jianhua; Li, Xiangyang; Lü, Hua; Jiang, Runqing; Liu, Zhaopeng; Hu, Zhihan; Gong, Haimei; Fang, Jiaxiong

doi:10.1063/1.123488

Cited by 12 publications

(4 citation statements)

References 11 publications

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“…Many investigations involving laser irradiation have been conducted on both the detectors and HgCdTe material, encompassing a wide range of wavelengths, operating mechanisms and irradiation time. These studies mainly focus on exploring saturation effect [3] and damage effect [4,5]. HgCdTe detectors depend on bulk material for photon absorption [6], while QWIPs utilize periodic nanostructured units with varying energy gaps to function as barriers and wells [7], enabling effective infrared detection.…”

Section: Introductionmentioning

confidence: 99%

Long-wave infrared laser irradiation damage effect on GaAs/AlGaAs quantum well infrared photodetector

Sun,

Qian,

Liu

et al. 2024

Phys. Scr.

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The damage effect and mechanism of laser irradiation on long-wave focal plane array (FPA) GaAs/AlGaAs quantum well infrared photodetector (QWIP) were preliminarily explored by using numerical simulation and experiment methods. Piecewise functions were employed to simulate the complex boundary structure of the QWIP, enabling the numerical simulation investigation of mono-pulse, nano-second, long-wave infrared laser irradiation damage effect on the QWIP. The highest QWIP temperature, the highest surface temperature and the maximum circumferential thermal stress were analyzed in relation to laser energy density. The pulse average energy density thresholds of thermal decomposition damage, melting damage and thermal stress-induced damage were theoretically obtained. Preliminary experiments were then conducted by using a mono-pulse, nano-second, 7.2 μm all-solid-state long-wave infrared laser. The experimental results revealed a point-shape damage in QWIP response measurement after the irradiation by a laser pulse of average energy density 1.30 J cm−2, due to the decomposition of GaAs. At a higher average energy density 5.42 J cm−2, both melting and stress-induced damages appeared, with the damage morphology predominantly influenced by stress-induced damage, resulting in the occurrence of blind pixels or the losing of pixels. Furthermore, at laser pulse average energy density 12.48 J cm−2, line-shape damage of the QWIP was observed.

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Section: Introductionmentioning

confidence: 99%

Long-wave infrared laser irradiation damage effect on GaAs/AlGaAs quantum well infrared photodetector

Sun,

Qian,

Liu

et al. 2024

Phys. Scr.

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“…Arora et al studied the responsivity of a PC-type HgCdTe detector irradiated with CW CO 2 [11]. They found that the responsivity decreased by two orders of magnitude when the temperature of the detector increased from 77 K to 150 K. Zhao et al researched the interaction between a CW CO 2 laser and P-type HgCdTe crystals [12]. They established a two-dimensional damage model solved using the finite difference method.…”

Section: Introductionmentioning

confidence: 99%

Damage Mechanism of HgCdTe Focal Plane Array Detector Irradiated Using Mid-Infrared Pulse Laser

Zhang,

Zheng,

Liu

et al. 2023

Sensors

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To investigate the damage threshold and mechanism of a mid-infrared HgCdTe focal plane array (FPA) detector, relevant experimental and theoretical studies were conducted. The line damage threshold of a HgCdTe FPA detector may be within the range of 0.59 Jcm−2 to 0.71 Jcm−2. The full frame damage threshold of the detector may be in the range of 0.86 Jcm−2 to 1.17 Jcm−2. Experimental results showed that when the energy density reaches 1.17 Jcm−2, the detector exhibits irreversible full frame damage and is completely unable to image. Based on the finite element method, a three-dimensional model of HgCdTe FPAs detector was established to study the heat transfer mechanism, internal stress, and damage sequence. When HgCdTe melts, we think that the detector is damaged. Under these conditions, the theoretical damage threshold calculated using the detector model is 0.55 Jcm−2. The difference between theoretical and experimental values was analyzed. The relationship between damage threshold and pulse width was also studied. It was found that when the pulse width is less than 1000 ns, the damage threshold characterized by peak power density is inversely proportional to pulse width. This relationship can help us predict the experimental damage threshold of an FPA detector. This model is reasonable and convenient for studying the damage of FPA detectors with a mid-infrared pulse laser. The research content in this article has important reference significance for the damage and protection of HgCdTe FPA detectors.

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“…2 Laser weapons thermally damage their targets. [3][4][5] The thermal effect is induced by the heat converted from the absorbed laser energy. Due to this thermal effect, laserinduced surface damage, such as slipping, cracking, melting, and ablation, occur.…”

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confidence: 99%

Initiation time of near-infrared laser-induced slip on the surface of silicon wafers

Choi

Jhang

2014

Applied Physics Letters

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We have determined the initiation time of laser-induced slip on a silicon wafer surface subjected to a near-infrared continuous-wave laser by numerical simulations and experiments. First, numerical analysis was performed based on the heat transfer and thermoelasticity model to calculate the resolved shear stress and the temperature-dependent yield stress. Slip initiation time was predicted by finding the time at which the resolved shear stress reached the yield stress. Experimentally, the slip initiation time was measured by using a laser scattering technique that collects scattered light from the silicon wafer surface and detects strong scattering when the surface slip is initiated. The surface morphology of the silicon wafer surface after laser irradiation was also observed using an optical microscope to confirm the occurrence of slip. The measured slip initiation times agreed well with the numerical predictions.

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Damage threshold of HgCdTe induced by continuous-wave CO2 laser

Cited by 12 publications

References 11 publications

Long-wave infrared laser irradiation damage effect on GaAs/AlGaAs quantum well infrared photodetector

Long-wave infrared laser irradiation damage effect on GaAs/AlGaAs quantum well infrared photodetector

Damage Mechanism of HgCdTe Focal Plane Array Detector Irradiated Using Mid-Infrared Pulse Laser

Initiation time of near-infrared laser-induced slip on the surface of silicon wafers

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