Dangling bond defects in SiC: An 
<i>ab initio</i>
 study

Tuttle, Blair

doi:10.1103/physrevb.97.045203

Cited by 11 publications

(5 citation statements)

References 44 publications

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“…Similar dangling bond appears when phosphorene is doped by group VII dopants (F, Cl) [52]. Such dangling bonds can modify the properties of semiconductors such as hydrophilicity [76], leakage currents [77], etc.…”

Section: Structural Electronic (Spin) and Optical Properties Of Prist...mentioning

confidence: 80%

Functionalization of electronic, spin and optical properties of GeSe monolayer by substitutional doping: a first-principles study

Chakraborty¹,

Ahmed²,

Subrina³

2021

Nanotechnology

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Substitutional doping has traditionally been used to modulate the existing properties of semiconductors and introduce new exciting properties, especially in two-dimensional materials. In this work, we have investigated the impact of substitutional doping (using group III, IV, V, and VI dopants) on the structural, electronic, spin, and optical properties of GeSe monolayer by using first-principles calculations based on density functional theory. Our calculated binding energies, formation energies and phonon dispersion curves of the doped systems support their stability and hence the feasibility of physical realization. Our results further suggest that switching between metallic and semiconducting states of GeSe monolayer can be controlled by dopant atoms with a different number of valence electrons. The band gap of the semiconducting structures can be tuned within a range of 0.2864 eV to 1.17 eV by substituting with different dopants. In addition, most of the doped structures maintain the low effective mass, 0.20 m 0 to 0.59 m 0 for electron and 0.21 m 0 to 0.52 m 0 for hole, which ensures the enhanced transport properties of GeSe based electronic devices. Moreover, when Ge is substituted with group V dopants, a magnetic moment is introduced in an otherwise non-magnetic GeSe monolayer. The optical absorption coefficient of the doped structures can be significantly improved (>2×) in the visible and infrared regions. These intriguing results would encourage the applications of doped GeSe monolayer in next-generation electronic, optoelectronic and spintronic devices.

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Section: Structural Electronic (Spin) and Optical Properties Of Prist...mentioning

confidence: 80%

Functionalization of electronic, spin and optical properties of GeSe monolayer by substitutional doping: a first-principles study

Chakraborty¹,

Ahmed²,

Subrina³

2021

Nanotechnology

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“…Figure 2 show in schematic band diagram of a-Si: H. The continuous state distribution in the pseudo gap, tail states, and defect states, is acting as a charge reservoir which can be filled up and emptied. Dangling bonds, which are unoccupied valence electrons that are not engaging in the bonding with their nearest neighboring atom, are the most significant and prevalent defect type that determines the performance of a-Si solar cells [13]. Defects in the band gap caused by dangling bonds act as possible trap sites and recombination centers and significantly lower the mobility and lifespan of charge carriers.…”

Section: Resultsmentioning

confidence: 99%

Thin Layer Deposition of a-Si: H n-Type Hydrogenated Amorphous Silicon using PECVD

Prayogi

2023

JSIS

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In this study, we report that N-type hydrogenated amorphous silicon (a-Si: H) was grown with the addition of H2 using the Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. The deposition was carried out for several process parameters including deposition time, gas pressure, and substrate temperature with the aim of obtaining a thin a-Si: H layer which has effective optical properties for solar cell materials. To indicate the nature of this semiconductor, the optical band gap is measured. From the measurement using Tauc's Plot method on the absorption data of the UV-Vis spectrum as a function of wavelength, the optical bandgap energy of the thin film was obtained. While the thickness of the thin layer was characterized by using Atomic Force Microscopy (AFM). The characterization results show that the optical band gap energy is 1.8 eV and the thickness of the thin film formed is 72 nm.

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“…Pada laju Boron 2 sccm terlihat pada warna biru, nilai konduktivitasnya meningkat seiring dengan bertambahnya laju Hidrogen. Hasil yang berbeda tampak pada laju Boron 4 sccm terlihat pada Gambar merah, nilai konduktivitasnya menurun seiring dengan meningkatnya laju Hidrogen (Tuttle, 2018). Gambar 6.…”

Section: Konduktivitas Listrikunclassified

Fabrikasi dan Analisis Struktur Sel Surya Amorf Menggunakan Sistem PECVD

Prayogi,

Ayunis,

Cahyono

et al. 2023

JRST

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Pada studi ini, telah dilakukkan pembuatan lapisan sel surya silikon amorf terhidrogenasi (a-Si:H) tipe p dengan menggunakan sistem PECVD pada subtrat kaca ITO. Deposisi yang dilakukan selama 30 menit dengan daya RF 3-Watt dan temperatur 2700C. Fabrikasi sel surya amorf menggunakanmetode ekperimen dengan mengalirkan gas silan (SiH4) 20 sccm dengan variasi laju gas Hidrogen (H2) dari 30 sccm sampai 70 sccm dan laju gas Boron (B2H6) 2 sccm dan 4 sccm. Hasil fabrikasi sel surya amorf mendapatkan ketebalan lapisan yang diukur dengan spektrometer (NanoCalc-2000) sebesar 302,8-324,0 nm. Dengan menggunakan pengukuran four-point probe didapatkan konduktivitas gelap 3,34 x 10-3 S/cm dan konduktivitas terang didapatkan 3,91 x 10-3 S/cm. Serta, hasil pengukuran menggunakan UV-VIS mendapatkan energi gap sebesar 1,7-1,8 eV. Fabrikasi lapisan sel surya amorf ini diharapkan dapat meningkatkan efisiensi sel surya berbasis a-Si: H.

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Dangling bond defects in SiC: An ab initio study

Cited by 11 publications

References 44 publications

Functionalization of electronic, spin and optical properties of GeSe monolayer by substitutional doping: a first-principles study

Functionalization of electronic, spin and optical properties of GeSe monolayer by substitutional doping: a first-principles study

Thin Layer Deposition of a-Si: H n-Type Hydrogenated Amorphous Silicon using PECVD

Fabrikasi dan Analisis Struktur Sel Surya Amorf Menggunakan Sistem PECVD

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