DAPHNE silicon photonics technological platform for research and development on WDM applications

Baudot, Charles; Fincato, A.; Fowler, Daivid; Pérez-Galacho, Diego; Souhaite, A.; Messaoudène, S.; Blanc, R.; Richard, C.; Planchot, Jonathan; De-Buttet, Come; Orlando, B.; Gays, Fabien; Mezzomo, Cecilia M.; Bernard, E.; Marris‐Morini, Delphine; Vivien, Laurent; Kopp, Christophe; Bœuf, F.

doi:10.1117/12.2229035

Cited by 13 publications

(9 citation statements)

References 4 publications

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“…On each arm, metallic strips close to a passive part of the waveguides are used as resistors (heaters) to thermally tune the operating point of the MZM under the application of a DC voltage. The MZM was fabricated at ST-Microelectronics on a 300 mm SOI technological platform [8].…”

Section: Device Designmentioning

confidence: 99%

Generation of O-band PAM-4 signal using a silicon modulator driven by two binary sequences

Deniel

Pérez-Galacho

Baudot

et al. 2019

Silicon Photonics XIV

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Silicon photonics is a promising solution for next generation of short-range optical communication systems. Silicon modulators have driven an important research activity over the past years, and many transmission links using on-off keying modulation format (OOK) were successfully demonstrated with a large diversity of modulator structures. In order to keep up with the demand of increasing bitrates for limited bandwidths in Datacom applications, higher modulation formats are explored, such as quadrature phase shift keying (QPSK) or 4-level pulse amplitude modulation (PAM-4). However, driving the modulators to generate PAM-4 signals commonly require expensive and power-hungry electronic devices such as digital-to-analog converters (DACs) for pulse-shaping and digital signal processors (DSP) for nonlinearity compensation. Lastly, new solutions were studied to overcome this issue, including new driving methods based on the use of two different input binary sequences applied directly on the modulator. While most of the reported works are focused on the C-band of communication, the O-band can present a definitive advantage due to the low dispersion of standard single-mode (SSMF) fiber. For those reasons, we demonstrate the generation of a 10-Gbaud DAC-less PAM-4 signal in the O-band using a depletion-based silicon traveling wave Mach-Zehnder modulator (TWMZM). An open eye diagram was obtained, and a bit error rate (BER) of 3.810-3 was measured for a received optical power of about-6 dBm.

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Section: Device Designmentioning

confidence: 99%

Generation of O-band PAM-4 signal using a silicon modulator driven by two binary sequences

Deniel

Pérez-Galacho

Baudot

et al. 2019

Silicon Photonics XIV

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“…Metallic heaters form low-speed/high-efficiency static phase-shifters that are used to bias the interferometer by tuning the DC phase-shift Φ between both arms, as reported in Fig 1 (d). The modulator was fabricated using the 300-mm DAPHNE technological platform from STMicroelectronics [24]. The on-chip losses of the modulator are estimated below 3.8 dB, corresponding to 2.6 dB for the 2-mm-long active region, while losses below 0.6 dB are estimated for each MMI couplers.…”

Section: S II Modulator Design and Propertiesmentioning

confidence: 99%

QPSK Modulation in the O-Band Using a Single Dual-Drive Mach–Zehnder Silicon Modulator

Pérez-Galacho

Bramerie

Baudot

et al. 2018

J. Lightwave Technol.

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Keeping up with bandwidth requirements in next generation short-and long-reach optical communication systems will require migrating from simple modulation formats such as on-off keying (OOK) to more advanced formats such as quadrature phase-shift keying (QPSK). In this work, we report the first demonstration of QPSK signal generation in the O-Band using a silicon dual-drive Mach-Zehnder modulator (DD-MZM). The performance of the silicon DD-MZM is assessed at 20 Gb/s and compared against a similar DD-MZM based on LiNbO3, showing a limited implementation power penalty of only 1.5 dB.

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“…Highly doped P ++ and N ++ regions are used away from the optical mode to reduce access resistance without increasing optical losses. The modulators were fabricated using the 300 mm DAPHNE technological platform from STMicroelectronics [9].…”

Section: Silicon Modulator Designmentioning

confidence: 99%

Advanced modulation format using silicon modulators in the O-band

Pérez‐Galacho¹,

Bramerie²,

Baudot³

et al. 2018

Integrated Optics: Devices, Materials, and Technologies XXII

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DAPHNE silicon photonics technological platform for research and development on WDM applications

Cited by 13 publications

References 4 publications

Generation of O-band PAM-4 signal using a silicon modulator driven by two binary sequences

Generation of O-band PAM-4 signal using a silicon modulator driven by two binary sequences

QPSK Modulation in the O-Band Using a Single Dual-Drive Mach–Zehnder Silicon Modulator

Advanced modulation format using silicon modulators in the O-band

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