A novel
hybrid hole transport layer (HTL) of CuInSe2 quantum dots
(QDs)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)
(PEDOT:PSS) was developed to enhance the performance of halide metal
perovskite (MAPbI3)-based photodetectors. The introduction
of CuInSe2 QDs not only improved the wettability of the
PEDOT:PSS HTL for the growth of perovskite crystals but also facilitated
the transportation of holes from the perovskite to the HTL. As a result,
both responsivity and detectivity of the device were increased dramatically
by CuInSe2 QDs hybrid HTL, showing excellent photoresponsivity
of 240 mA/W, larger ratio of photocurrent density to dark current
density of 4.1 × 106, fast on–off switching
properties of <0.02 s, and remarkable detectivity values of 1.02
× 1013 Jones at 580 nm and above 5.01 × 1012 Jones over the visible light region without an external
bias voltage. In addition, the photodetectors also showed excellent
thermal stability in the range of 10–110 °C. Therefore,
a unique design idea of a hole transport material would be an anticipated
direction for efficient halide metal perovskite-based devices.