“…Since, the n eff strongly depends on doping in the n + GaAs contact layers and n + GaAs QWs as well as on Al composition in the Al x Ga 1-x As barrier layer [11,12], changing these parameters in different QWIP designs demands different optimal grating periods. In general, the optimal grating parameters for a particular band of the QWIP can be obtained by performing detector characterizations at low temperature [13] where various processes such as several critical fabrication steps, packaging, bonding, low temperature measurement and their associated costs are involved. It is thus worthy to explore a simple cost effective technique to nd optimal gratings for the QWIP.…”