Dark Current Model of Quantum Dot Infrared Photodetectors Based on the Influence of the Drift Velocity of the Electrons

Abstract

Quantum dot infrared photodetectors (QDIPs) have already attracted more and more attention in recent years due to its superior performance. In this paper, a model for the dark current of the QDIP is built. This model supposes that the dark current in the potential barriers is equal to the dark current of the total device according to the structure of the QDIP, and the total electrons transport, the drift velocity and the mobility dependences on the electric field are also taken into account. The corresponding results show the correctness and the validity of the dark current model.

Optimization of Quantum Dot Infrared Photodetectors Based on Noise Model

“…In this section, the noise of QDIP is simulated and calculated to verify the right of the model built and the contributions of some related structure parameters such as QD a , QD h , QD Σ ,L to the noise are also shown. These calculations are performed based on the parameters from GaAs or InGaAs QDIP device [7,10,12,13] , and the values of the corresponding parameters are shown in the Table 1.…”

“…where s v is the saturation velocity of electrons, µ the mobility of electrons, and it can be calculated as [9,10]:…”