Quantum dot infrared photodetectors (QDIPs) have already attracted more and more attention in recent years due to its superior performance. In this paper, a model for the dark current of the QDIP is built. This model supposes that the dark current in the potential barriers is equal to the dark current of the total device according to the structure of the QDIP, and the total electrons transport, the drift velocity and the mobility dependences on the electric field are also taken into account. The corresponding results show the correctness and the validity of the dark current model.

As an important property of the quantum dot infrared photodetector, the noise has attracted extensive attention. In this paper, the model for the noise of the QDIP is built. This model takes the total electron transport and the dependence of the drift velocity of electrons on the electric field into account. The corresponding calculated results not only show a good agreement with the published results, but also illustrate the dependence of the noise on the structure which can provide us with a method used to optimize the structure of the detector devices.