Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum well

Waters, R. G.; Dalby, R. J.; Baumann, John A.; Sanctis, J.L. De; Shepard, Allan H.

doi:10.1109/68.93861

Cited by 39 publications

(7 citation statements)

References 15 publications

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“…It has been suggested that adding indium to the active region increases the resistance to dark line defect propagation and other defects generation during device operation. 6,7 In comparison with single red and IR lasers fabricated from similar laser structures grown on GaAs substrates, the red/IR laser diodes show similar characteristics. More specifically, the threshold currents of the red/IR laser diodes fill in the low end of the distribution of the values observed for the single wavelength lasers.…”

Section: ͓S0003-6951͑98͒02939-8͔mentioning

confidence: 93%

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Red and infrared side by side semiconductor quantum well lasers integrated on a GaAs substrate

Sun

Treat

Beernink

et al. 1998

Applied Physics Letters

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Section: ͓S0003-6951͑98͒02939-8͔mentioning

confidence: 93%

“…A separate confinement heterostructure infrared laser containing an In 0.15 Al 0.15 Ga 0.7 As/Al 0.4 Ga 0. 6 As QW with AlInP cladding layers was grown on a GaAs substrate. The wafer was then patterned with stripes of etch masks and was etched back to the substrate.…”

mentioning

confidence: 99%

Red and infrared side by side semiconductor quantum well lasers integrated on a GaAs substrate

Sun

Treat

Beernink

et al. 1998

Applied Physics Letters

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“…The variation is mainly due to varying carrier loss rates with consequent heat generation varying optical mode intensities and varying surface properties of the semiconductor and properties of the mirror coatings and optional passivation techniques etc. Also defect types in different materials play a role, significant general reliability (CW power degradation) advantages have been reported for InAlGaAs over AlGaAs due to better resistance to <100> dark-line propagation [45] and against aluminum out-diffusion into the confinement layers [46].…”

Section: Laser Comd Levels From Different Materials Systemsmentioning

confidence: 99%

Nitride facet passivation raises reliability, COMD, and enables high-temperature operation of InGaAsP, InGaAs, and InAlGaAs lasers

Silfvenius¹,

Sun²,

Blixt³

et al. 2005

SPIE Proceedings

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The laser diode technology, underpinning applications such as data storage, industrial lasers and optical telecommunications, still suffers from reliability and longevity limitations, especially in high power applications. A main problem for these lasers arises from facet oxidation, leading to increased absorption, power degradation and COMD device failure. Typically, high power devices initially show a low linear degradation and after some 100 hours, the degradation accelerates in a nonlinear fashion, indicating a degradation runaway condition. This article reports performance and reliability improvements that are based on a process which atomically seals surfaces and eliminates oxidation by forming stable nitrides on laser facets. The dangling bond terminating technology suppresses accelerated degradation associated with optical density and heat at laser facets. The dangling bond termination is demonstrated by improved COMD, decreased degradation at CW operation and a constant linear degradation rate at different QW temperature conditions (nonlinear degradation indicates advancement in the oxidation/optical absorption/facet heating/oxidation spiral). The technology is applicable to a range of material systems and has previously been demonstrated on InAlGaAs and InGaAs (increased COMD to >270 and 470mW/µm respectively). The devices with the typically lowest COMD levels (AlInGaAs) show a remarkably low linear degradation rate of <0.5%/kh during at CW life test operation at 90˚C and a power level corresponding to 80W bar power. In addition to long term AlInGaAs laser life test results, this paper presents results on nitride facet passivation applied to 805nm InGaAsP devices, showing improved COMD to 400mW/µm and the initial CW life data confirms the general behavior of the previously life-tested InGaAs and InAlGaAs based devices.

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“…[4][5][6][7]9,12,13 TEM contrast techniques and stereo electron micrographs have also been used in the analysis of DLDs. These results showed that DLDs in different structures have similar nature which stretch along ͗100͘ and ͗110͘ directions ͑so-called ͗100͘ DLDs and ͗110͘ DLDs͒.…”

Section: Dark-line Defects (Dlds) In Gaas-based Heterostructuresmentioning

confidence: 99%

Analysis of dark-line defect growth suppression in InxGa1−xAs/GaAs strained heterostructures

Wang

Hopgood

1997

Journal of Applied Physics

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Erratum: "X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth" [J.The driving force of ͗100͘ dark-line defect ͑DLD͒ climbing growth based on vacancy unsaturation is discussed. In In x Ga 1Ϫx As/GaAs strained structures, it is found that compressive strain can reduce the osmotic ͑climb͒ force and can suppress the climb of DLDs in ͗100͘ direction. The percentage of indium in In x Ga 1Ϫx As/GaAs strained heterostructures for the suppression of ͗100͘ DLD propagation is calculated under different material growth temperatures and doping levels. For an n-type doping level higher than 5ϫ10 16 cm Ϫ3 , an indium percentage less than approximately 9% in In x Ga 1Ϫx As/GaAs heterostructures is sufficient to stop the ͗100͘ DLDs growth and agrees well with the experimental observation. These results are useful for the design and fabrication of high reliability strained heterostructure devices.

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Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum well

Cited by 39 publications

References 15 publications

Red and infrared side by side semiconductor quantum well lasers integrated on a GaAs substrate

Red and infrared side by side semiconductor quantum well lasers integrated on a GaAs substrate

Nitride facet passivation raises reliability, COMD, and enables high-temperature operation of InGaAsP, InGaAs, and InAlGaAs lasers

Analysis of dark-line defect growth suppression in InxGa1−xAs/GaAs strained heterostructures

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